公开(公告)号：CA1084172A

公开(公告)日：1980-08-19

申请号：CA300171

申请日：1978-03-31

Applicant: IBM

Inventor： GRANDIA JOHANNES ,  HILL JOHN C

IPC: B24B27/06 ,  B28D1/00 ,  B28D5/00 ,  B28D5/02 ,  C30B33/00 ,  B24B1/02 ,  H01L21/461

Abstract: A PROCESS FOR SLICING BOULES OF SINGLE CRYSTAL MATERIAL A process for slicing boules of a single crystal material such as gadolinium gallium garnet (GGG) into wafers is described. The boule is prepared, by grinding preferably, so that the longitudinal boule axis corresponds to the crystallographic orientation axis of the boule. The boule is then mounted in a fixture and aligned so that the common longitudinal axis and crystallographic orientation axis is perpendicular to the saw blade. The boule is then rotated while maintaining the orientation of the combined common axis and engaged against an inner diameter rotating saw blade for a time sufficient for the blade to slice through the boule and form a wafer. The wafers obtained by this slicing process may be directly polished without the conventional lapping step to form a wafer having a surface that is substantially flat, parallel and defect free.

公开(公告)号：FR2392793A1

公开(公告)日：1978-12-29

申请号：FR7813285

申请日：1978-04-27

Applicant: IBM

Inventor： GRANDIA JOHANNES ,  HILL JOHN C

IPC: B24B27/06 ,  B28D1/00 ,  B28D5/00 ,  B28D5/02 ,  C30B33/00 ,  G11C11/04

Abstract: A process for slicing boules of a single crystal material such as gadolinium gallium garnet (GGG) into wafers is described. The boule is prepared, by grinding preferably, so that the longitudinal boule axis corresponds to the crystallographic orientation axis of the boule. The boule is then mounted in a fixture and aligned so that the common longitudinal axis and crystallographic orientation axis is perpendicular to the saw blade. The boule is then rotated while maintaining the orientation of the combined common axis and engaged against an inner diameter rotating saw blade for a time sufficient for the blade to slice through the boule and form a wafer. The wafers obtained by this slicing process may be directly polished without the conventional lapping step to form a wafer having a surface that is substantially flat, parallel and defect free.