-
公开(公告)号：US3674004A
公开(公告)日：1972-07-04
申请号：US3674004D
申请日：1969-12-30
Applicant: IBM
Inventor： GRANDIA JOHANNES , ROHR ROBERT LEWIS
IPC: B26D1/553 , B26D1/547 , B28D5/04 , H01L21/301
CPC classification number: B28D5/042
Abstract: A precision cutting apparatus including a cutting tool which consists of at least a single flexible cutting element and means coacting with said cutting element for holding it in a rigid, unstressed condition is disclosed. The flexible cutting element is ordinary spring steel while the means for holding the cutting element in a rigid, unstressed condition is a block of dimensionally-stable pyrolytic graphite containing a groove in which the spring steel cutting element is receivable. Also disclosed, is translation means for applying rectilinear motion to the cutting tool, and a means for aligning the work piece relative to the cutting tool. The grooved graphite block, in addition to providing a dimensionally stable holder, also provides a porous material into which an adhesive may be introduced to retain the cutting element within the grooves. Heating the graphite block liquefies an appropriate adhesive and permits the removal of an old cutting element and its replacement with a new cutting element. A method of operating the cutting apparatus is also shown including an alignment step which permits extremely precise cutting. The apparatus and method taught have particular utility in the semiconductor area where the ability to dice with great precision, for example, greatly enhances the yield of usable semiconductor chips.
Abstract translation: 公开了一种精密切割设备，其包括由至少一个柔性切割元件组成的切割工具和与所述切割元件共同作用的装置，用于将其保持在刚性的无应力状态。 柔性切割元件是普通弹簧钢，而用于将切割元件保持在刚性的无应力状态的装置是包含能够接收弹簧钢切割元件的凹槽的尺寸稳定的热解石墨块。 还公开了用于对切割工具施加直线运动的平移装置和用于使工件相对于切割工具对准的装置。 开槽石墨块除了提供尺寸稳定的保持器之外，还提供多孔材料，粘合剂可以引入其中以将切割元件保持在槽内。 加热石墨块可以液化适当的粘合剂，并允许使用新的切割元件去除旧的切割元件并进行更换。 还示出了操作切割装置的方法，其包括允许非常精确的切割的对准步骤。 所教导的装置和方法在半导体领域具有特别的用途，其中例如极大地精确地骰子的能力大大提高了可用的半导体芯片的产量。
-
公开(公告)号：US3881037A
公开(公告)日：1975-04-29
申请号：US36051873
申请日：1973-05-15
Applicant: IBM
Inventor： GRANDIA JOHANNES , POTEMSKI ROBERT MARTIN , WOODALL JERRY MCPHERSON
IPC: C30B19/00 , C30B19/06 , H01L21/208 , H01L7/00 , H01L7/40
CPC classification number: C30B19/00 , C30B19/06 , C30B29/40 , H01L21/02395 , H01L21/02546 , H01L21/02625 , H01L21/02628 , Y10S148/065
Abstract: It has been discovered for the practice of this invention that when two melts at the same temperature which were separately and simultaneously saturated are mixed, the combined melt is supersaturated and crystal growth occurs isothermally. Mixing of different melts is caused to occur so as to control both composition and amount of growth of the resultant solid substance. A new technique for heterojunction growth has been discovered for the practice of this invention. The method has the capability for growing multi-layered structures over a wide range of thicknesses and especially for layer thicknesses substantially less than 1 micron. Generally, the practice of this invention provides solutions to several problems associated with the liquid phase epitaxy method. Specifically, it provides for the maintenance of GaAs surface in suitable form for high quality growth of a layer thereon and for the facility of controllably changing the layer composition in the case of semiconductor materials with more than two components. Important features of the invention are: a partitioned crucible of isolating two or more melts; a window in each melt compartment which exposes the melt to the substrate when correctly aligned; and a substrate holder which can be positioned to allow contact with one melt and then repositioned to allow contact with one or more other melts without the loss of a solid-liquid interface. In the preferred embodiment of the invention, the windows are opened on the walls of an inner crucible; the substrate is held in two slots on a ground face of a cylindrical rod which can be rotated from one window to the next.
Abstract translation: 对于本发明的实践已经发现，当在相同温度下分开并同时饱和的两种熔体混合时，组合的熔体是过饱和的，并且等温发生晶体生长。 引起不同熔体的混合，以便控制所得固体物质的组成和生长量。 已经发现用于异质结生长的新技术用于本发明的实践。 该方法具有在宽范围的厚度上增长多层结构的能力，特别是对于基本上小于1微米的层厚度。
-
公开(公告)号：AU3240971A
公开(公告)日：1973-02-22
申请号：AU3240971
申请日：1971-08-16
Applicant: IBM
Inventor： GRANDIA JOHANNES , POTEMSKI ROBERT MARTIN , WOODALL JERRY MACPHERSON
IPC: C30B19/06 , H01L21/208 , B01D9/02
-
公开(公告)号：CH633744A5
公开(公告)日：1982-12-31
申请号：CH411078
申请日：1978-04-18
Applicant: IBM
Inventor： GRANDIA JOHANNES , HILL JOHN CHARLES
-
公开(公告)号：CA873626A
公开(公告)日：1971-06-22
申请号：CA873626D
Applicant: IBM
Inventor： GRANDIA JOHANNES , MARINACE JOHN C
-
Patent Agency Ranking
公开(公告)号：CA1084172A
公开(公告)日：1980-08-19
申请号：CA300171
申请日：1978-03-31
Applicant: IBM
Inventor： GRANDIA JOHANNES , HILL JOHN C
Abstract: A PROCESS FOR SLICING BOULES OF SINGLE CRYSTAL MATERIAL A process for slicing boules of a single crystal material such as gadolinium gallium garnet (GGG) into wafers is described. The boule is prepared, by grinding preferably, so that the longitudinal boule axis corresponds to the crystallographic orientation axis of the boule. The boule is then mounted in a fixture and aligned so that the common longitudinal axis and crystallographic orientation axis is perpendicular to the saw blade. The boule is then rotated while maintaining the orientation of the combined common axis and engaged against an inner diameter rotating saw blade for a time sufficient for the blade to slice through the boule and form a wafer. The wafers obtained by this slicing process may be directly polished without the conventional lapping step to form a wafer having a surface that is substantially flat, parallel and defect free.
-
公开(公告)号：FR2392793A1
公开(公告)日：1978-12-29
申请号：FR7813285
申请日：1978-04-27
Applicant: IBM
Inventor： GRANDIA JOHANNES , HILL JOHN C
Abstract: A process for slicing boules of a single crystal material such as gadolinium gallium garnet (GGG) into wafers is described. The boule is prepared, by grinding preferably, so that the longitudinal boule axis corresponds to the crystallographic orientation axis of the boule. The boule is then mounted in a fixture and aligned so that the common longitudinal axis and crystallographic orientation axis is perpendicular to the saw blade. The boule is then rotated while maintaining the orientation of the combined common axis and engaged against an inner diameter rotating saw blade for a time sufficient for the blade to slice through the boule and form a wafer. The wafers obtained by this slicing process may be directly polished without the conventional lapping step to form a wafer having a surface that is substantially flat, parallel and defect free.
-
公开(公告)号：CA1206436A
公开(公告)日：1986-06-24
申请号：CA386420
申请日：1981-09-22
Applicant: IBM
Inventor： GRANDIA JOHANNES , O'KANE DANIEL F , SANTINI HUGO A E
Abstract: ROTARY ELECTROPLATING CELL WITH CONTROLLED CURRENT DISTRIBUTION An apparatus and a method for rotary electroplating a thin metallic film having a uniform thickness and composition throughout. The apparatus includes a flow-through jet plate having nozzles of radially increasing size and uniformly spaced radially therethrough, or nozzles of the same size with varying radial spacing therebetween so as to provide a differential flow distribution of the plating solution that impinges on the wafer-cathode where the film is deposited. The spacing and size of the nozzles are critical to obtaining a uniform thickness. The electrical currents to the wafer and to a thieving ring are controlled by variable resistors so as to keep the electrical current to the cathode constant throughout the plating process. In a preferred embodiment the flow-through jet plate has an anode associated therewith in which the exposed area of the anode is maintained at a constant amount during the deposition. This method can simultaneously deposit with a uniform thickness and composition elements having a minimum gap or part size of 1 micrometer or less.
-
公开(公告)号：AU544471B2
公开(公告)日：1985-05-30
申请号：AU7742681
申请日：1981-11-12
Applicant: IBM
Inventor： GRANDIA JOHANNES , KANE DANIEL FRANCIS O , SANTINI HUGO ALBERTO EMILIO
Abstract: This invention relates to an apparatus and a method for rotary electroplating a thin metallic film having a uniform thickness and composition throughout. The apparatus includes a flow-through jet plate (20) having nozzles (22) of increasing size and uniformly spaced radially therethrough, or the same sized nozzles with varying radial spacing therethrough so as to provide a differential flow distribution of the plating solution that impinges on a wafer (32) disposed on a cathode (34). The spacing and size of the nozzles (22) are critical to obtaining a uniform thickness. The electrical currents to the wafer and to the thieving ring (42) are controlled by variable resistors so as to keep the electrical current to the cathode (34) constant throughout the plating process. In a preferred embodiment the flow-through jet plate (20) has an anode (26) associated therewith in which the exposed area of the anode is maintained at a constant amount during the deposition. This method can simultaneously deposit with a uniform thickness and composition elements having a minimum gap or part size of 1 micrometer or less.
-
公开(公告)号：CA1163538A
公开(公告)日：1984-03-13
申请号：CA356809
申请日：1980-07-23
Applicant: IBM
Inventor： GRANDIA JOHANNES , MCCHESNEY WILLIAM G , SANTINI HUGO A E , TURK HAROLD L
IPC: C30B19/06 , C30B25/12 , H01F41/28 , H01L21/208 , H01L21/368
Abstract: A HOLDER FOR LIQUID PHASE EPITAXIAL GROWTH A holder for liquid phase epitaxial (LPE) growth which eliminates mesas on the surface of the film is described. The holder has two legs to which a ring is connected. The ring has holding means so that it can hold one wafer or two wafers back-to-back. One of the two legs extends vertically below the first ring. In a preferred embodiment a second ring having holding means for a pair of wafers back-to-back is attached to the elongated leg. This holder structure prevents a film from the liquid melt from forming when the holder is withdrawn from the liquid growth solution, thereby eliminating the formation of mesas which occur when the film ruptures. SA979002
-
-
-
-
-
-
-
-
-
Search Results
17
records
(took 0.019 seconds)
