公开(公告)号：JP2002351354A

公开(公告)日：2002-12-06

申请号：JP2001148769

申请日：2001-05-18

Applicant: IBM

Inventor： HIROMASU YASUNOBU ,  NAKASOGI AKIHIRO

IPC: G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/302 ,  H01L21/311 ,  H01L21/768 ,  H01L21/77 ,  H01L27/32 ,  H01L29/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor(TFT) array substrate, a method of manufacturing the TFT array substrate and a display device. SOLUTION: This TFT array substrate includes an insulating substrate 12, TFTs formed in a matrix form on the insulating substrate 10 and extraction wires 46 electrically connected to the TFTs. A gate insulating film 32 is formed in the upper parts of the extraction wires 46 and a passivation film 38 is formed in the upper part of the gate insulating film 32. Further, an interlayer insulating film 42 including an organic polymer formed with ends is formed. Etching stoppers 50 are formed on the upper parts of at least either of the gate insulating 32 or passivation film 38 exposed from the end 48 of the interlayer insulating film 42.