LIQUID CRYSTAL DEVICE, AND METHOD AND DEVICE FOR PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE

    公开(公告)号:JP2001215514A

    公开(公告)日:2001-08-10

    申请号:JP2000026263

    申请日:2000-02-03

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal device having uniform perpendicular alignment a method and a device for the production of that liquid crystal device, with respect to the production of an electrically controlled birefringence effect (ECB) type perpendicular alignment liquid crystal device. SOLUTION: The liquid crystal device contains liquid crystal molecules 12 having negative dielectric anisotropy and a polyimide 18 for parallel alignment. The method of producing the device includes a process exposing one surface or the both surfaces of a substrate 14 of the liquid crystal device, having the liquid crystal molecules having a negative dielectric anisotropy aligned parallel by the alignment polyimide and to align the liquid crystal molecules in the perpendicular direction. The exposure device used for the exposure is equipped with a filter, so as to cut the light having =600 nm wavelength, to use the light having the wavelength of 400 nm to 600 nm. When a voltage is applied between electrodes 16 of the liquid crystal device, a response time becomes faster.

    MANUFACTURE OF SEMICONDUCTOR DEVICE

    公开(公告)号:JPH06104171A

    公开(公告)日:1994-04-15

    申请号:JP24903892

    申请日:1992-09-18

    Applicant: IBM JAPAN

    Abstract: PURPOSE:To form a resist mask whose reflow effect is fixed without depending on a resist pattern by applying a thin film resist layer all over a resist pattern with a step or a recessed part, by exposing it vertically and by making the thin film resist layer remaining on a vertical wall reflow by heating. CONSTITUTION:A resist material layer applied all over a processing surface 2 is exposed by a reduction projection aligner and then developed to form a resist pattern 1. The resist pattern 1 is provided with a step or a recessed part 5 having a right-angled vertical sidewall 4 to a plane part 3, and set by heating type far ultraviolet ray setting, etc., to form a set resist pattern 6. Then, a thin film resist layer 7 of low viscosity resist is applied all over the surface, exposed by batch exposure in a vertical direction and is developed to make only the thin film resist layer 7 on the vertical wall 4 remain. The remaining thin film resist layer 7 is made to reflow and is formed to a side cross sectional contour with a forward taper or a forward tilt together with the vertical wall 4.

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