公开(公告)号：DE3580335D1

公开(公告)日：1990-12-06

申请号：DE3580335

申请日：1985-08-20

Applicant: IBM

Inventor： HORR ROBERT ARTHUR ,  MOHLER RICK LAWRENCE

IPC: H01L21/033 ,  H01L21/32 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/82 ,  H01L21/00

Abstract: A process is provided for making semiconductor structures. such as CMOS structures, which includes forming on a surface of a semiconductor body (12) a layer from a material which is impervious to oxygen diffusion therethrough and patterning this layer to define the position of both the active and field isolation regions by partially removing this layer from the areas where the field isolation regions are to be formed. This oxygen impervious layer may be a dual dielectric structure consisting of a layer of silicon dioxide (14) adjoinmg the semiconductor body and a layer of silicon nitride (16) adjoining the silicon dioxide. The resulting structure includes an oxygen impervious layer (16b) which is used both for protecting all underlying oxidizing regions from oxidation and for defining the position of the active regions of the structure.