公开(公告)号：DE2861220D1

公开(公告)日：1981-12-24

申请号：DE2861220

申请日：1978-12-09

Applicant: IBM

Inventor： EL-KAREH BADIH ,  GERSBACH EDWIN JOHN ,  HOUGHTON JAMES RUSSELL

IPC: G11C11/405 ,  G11C11/39 ,  G11C11/403 ,  H01L21/8229 ,  H01L27/07 ,  H01L27/102 ,  G11C11/24 ,  G11C11/34 ,  H01L27/06

Abstract: This describes a novel bipolar dynamic cell especially useful as a Random Access Memory Cell. In the described cell a PNP transistor drives an NPN transistor so that information is stored at the base node of the PNP transistor. By using the PNP transistor as a read transistor and the NPN as a write transistor the cell, when made in integrated form, utilizes the cell isolation capacitance to enhance the stored information without increasing the parasitic capacitances in the cell thereby obtaining greater contrast between 0 and 1 signals than can be obtained in prior art cells. This cell is especially useful in memory arrays.