公开(公告)号：US3899372A

公开(公告)日：1975-08-12

申请号：US41151873

申请日：1973-10-31

Applicant: IBM

Inventor： ESCH RONALD PHILIP ,  HUANG PATRICK CHIN-SHENG

IPC: H01L29/78 ,  H01L21/22 ,  H01L21/31 ,  H01L21/316 ,  H01L21/331 ,  H01L21/336 ,  H01L21/76 ,  H01L29/00 ,  H01L29/73

CPC classification number: H01L21/31662 ,  H01L21/02238 ,  H01L21/02255 ,  H01L29/00 ,  Y10S148/116 ,  Y10S148/141

Abstract: The invention is a process of fabricating semiconductor devices including an insulating film across the surface that has a planar configuration. Alternatively, the film may be of uniform thickness and non-planar configuration. Both the planar and uniform thickness characteristics of the insulating film permit openings to be formed therein without over etching a defined surface area and conductors to be formed thereon without broadening. An important feature of the invention is utilizing the differential growth rate of films on semiconductor surfaces and/or selection of a suitable initial film thickness as a diffusion mask. The initial film thickness also contributes to a planar or uniform film thickness or other configuration across the device.

Abstract translation: 本发明是制造半导体器件的方法，该半导体器件包括跨过表面的绝缘膜，该绝缘膜具有平面构型。 或者，膜可以具有均匀的厚度和非平面构造。 绝缘膜的平面和均匀厚度特性都允许在其中形成开口，而不会过度蚀刻限定的表面积，并且在其上形成的导体不会变宽。 本发明的一个重要特征是利用半导体表面上的膜的差分生长速率和/或适当的初始膜厚度的选择作为扩散掩模。 初始膜厚度还有助于平面或均匀的膜厚度或跨装置的其它构型。

公开(公告)号：DE2445879A1

公开(公告)日：1975-05-07

申请号：DE2445879

申请日：1974-09-26

Applicant: IBM

Inventor： ESCH RONALD PHILIP ,  HUANG PATRICK CHIN-SHENG

IPC: H01L29/78 ,  H01L21/22 ,  H01L21/31 ,  H01L21/316 ,  H01L21/331 ,  H01L21/336 ,  H01L21/76 ,  H01L29/00 ,  H01L29/73