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    Method of determining impurity profile of a semiconductor body
    1.
    发明授权
    Method of determining impurity profile of a semiconductor body 失效
    确定半导体体的折射率分布的方法

    公开(公告)号：US3660250A

    公开(公告)日：1972-05-02

    申请号：US3660250D

    申请日：1970-08-31

    Applicant: IBM

    Inventor： DUFFY MICHAEL C ,  HUDSON RICHARD L

    IPC: G01N27/04 ,  G01R31/26 ,  H01L23/29

    CPC classification number: G01R31/2637 ,  G01N27/041 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    Abstract: A machine and method for automatically determining the distribution of impurities contained in a semiconductor body. The machine is particularly useful in determining the depth of very shallow junctions in the order of one-half micron and less. The machine successively anodizes the surface of the semiconductor body to produce an anodized semiconductor layer, removes the anodized layer by chemical etching, measures an electrical characteristic, such as spreading resistance and sheet resistance, of the semiconductor body and records the electrical characteristic in terms of the characteristic versus the amount of material removed. The machine automatically repeats this cycle until a resistivity profile for the desired depth of material is obtained. A sharp change will be observed in the recorded profile of the electrical characteristic versus the amount of material removed when a PN junction is crossed.

    Abstract translation: 一种用于自动确定包含在半导体本体中的杂质分布的机器和方法。 该机器特别适用于确定非常浅的接头的深度为半微米和更小的数量级。 该机器依次阳极氧化半导体主体的表面以产生阳极化半导体层，通过化学蚀刻去除阳极氧化层，测量半导体本体的电特性，例如耐扩散电阻和薄层电阻，并记录电特性 特征与去除材料的数量。 机器自动重复此循环，直到获得所需材料深度的电阻率曲线。 在记录的电气特征曲线相对于PN结交叉处移除的材料量将会发生急剧变化。

    Automatic impurity profiling machine
    2.
    发明授权
    Automatic impurity profiling machine 失效
    自动造型机

    公开(公告)号：US3554891A

    公开(公告)日：1971-01-12

    申请号：US3554891D

    申请日：1967-12-22

    Applicant: IBM

    Inventor： DUFFY MICHAEL C ,  HUDSON RICHARD L

    IPC: G01N27/04 ,  G01R31/26 ,  G01R31/28 ,  H01L23/29 ,  B01K3/00

    CPC classification number: G01R31/2831 ,  G01N27/041 ,  G01R31/2637 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A MACHINE AND METHOD FOR AUTOMATICALLY DETERMINING THE DISTRIBUTION OF IMPURITIES CONTAINED IN A SEMICONDUCTOR BODY. THE MACHINE IS PARTICULARLY USEFUL IN DETEMINING THE DEPTH OF VERY SHALLOW JUNCTIONS IN THE ORDER OF 1/2 MICRON AND LESS. THE MACHINE SUCESSIVELY ANODIZES THE SURFACE OF THE SEMICONDUCTOR BODY TO PRODUCE AN ANODIZED SEMICONDUTOR LAYER, REMOVES THE ANODIZED LAYER BY CHEMICAL ETCHING, MEASURES AN ELECTRICAL CHARACTERISTIC, SUCH AS A SPREADING RESISTANCE AND SHEET RESISTANCE, OF THE SEIMICONDUCTOR BODY AND RECORDS THE ELECTRICAL CHARACTERISTIC IN TERMS OF THE CHARACTERISTIC VERSUS THE AMOUNT OF MATERIAL REMOVED. THE MACHINE AUTOMATICALLY REPEATS THIS CYCLE UNTIL A RESISTIVITY PROFOLE FOR THE DESIRED DEPTH OF MATERIAL IS OBTAINED. A SHARP CHANGE WILL BE OBSERVED IN THE RECORDED PROFILE OF THE ELECTRICAL CHARACTERISTIC VERSUS THE AMOUNT OF MATERIAL REMOVED WHEN A PN JUCTION IS CROSSED.

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