公开(公告)号：US3796548A

公开(公告)日：1974-03-12

申请号：US3796548D

申请日：1971-09-13

Applicant: IBM

Inventor： BOSS D ,  HULL E ,  SCILLA S

IPC: C30B11/00 ,  C30B11/06 ,  C30B11/14 ,  C30B29/40 ,  H01L21/208 ,  B01J17/06

CPC classification number: C30B11/14 ,  C30B11/003 ,  Y10S117/90 ,  Y10T117/1092

Abstract: An apparatus useful for growing single crystal semiconductor material comprising a liquid melt section coaxially integrated with a seed cavity and having an annularly disposed integral thermal reflector means and a radiant heat dissipating member horizontally disposed and in a post linear direction from the seed cavity.

Abstract translation: 一种用于生长单晶半导体材料的装置，包括与种子腔同轴一体化的液体熔融部分，并且具有环形布置的整体式热反射器装置和从种子腔水平放置并沿着直线方向的辐射散热构件。

公开(公告)号：US3776789A

公开(公告)日：1973-12-04

申请号：US3776789D

申请日：1972-05-01

Applicant: IBM

Inventor： BASI J ,  HULL E

IPC: H01L21/308 ,  C30B29/42 ,  H01L21/316 ,  H01L23/31 ,  H01L7/50

CPC classification number: H01L21/31679 ,  H01L21/02241 ,  H01L21/02255 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for the protecton of gallium arsenide surfaces comprises treating the surface with sodium oxychloride solution to form an interim protective film and subsequently removing the protective film utilizing sodium oxychloride and sodium carbonate prior to further processing.

Abstract translation: 用于保护砷化镓表面的方法包括用氯氧化钠溶液处理表面以形成临时保护膜，随后在进一步加工之前利用氯化钠和碳酸钠除去保护膜。