公开(公告)号：US3738882A

公开(公告)日：1973-06-12

申请号：US3738882D

申请日：1971-10-14

Applicant: IBM

Inventor： BASI J

IPC: B24B37/00 ,  H01L21/304 ,  H01L21/306 ,  H01L7/00

CPC classification number: H01L21/30625

Abstract: AN IMPROVED METHOD FOR POLISHING GALLIUM ARSENIDE PLANAR SURFACES IS DISCLOSED COMPRISING POSITIONING GALLIUM ARSENIDE WAFERS OR SLICES IN CLOSE ADJACENCY TO A POLISHING MEDIUM PROVIDING A RELATIVE MOTION BETWEEN SAID WAFER AND POLISHING MEDIUM WHILE PROVIDING A CONTROLLED PREDETERMINED FLOW OF ALKALI METAL HYPOCHLORITE AND ALKALI CARBONATE SOLUTION TO SAID WAFERS AND POLISHING MEDIUM AND CONTINUING THE RELATIVE MOTION UNTIL THE WAFER SURFACE

IS POLISHED TO A SMOOTH AND FEATURELESS CONDITION WHEREUPON THE WAFERS ARE WASHED AND REMOVED FROM THE POLISHING MECHANISM.

公开(公告)号：US3748198A

公开(公告)日：1973-07-24

申请号：US3748198D

申请日：1970-01-22

Applicant: IBM

Inventor： BASI J ,  SANDHU J

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/225 ,  H01L21/316 ,  H01L21/331 ,  H01L7/34

CPC classification number: H01L21/31625 ,  H01L21/00 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02362 ,  Y10S148/043

Abstract: A SIMULTANEOUS DOUBLE DIFFUSION METHOD WHEREIN A COATING CONTAINING A SILICON OXIDE AND THE OXIDES OF A PLURALITY OF CONDUCTIVITY-DETERMINING IMPURITIES HAVING DIFFERENT DIFFUSIVITY RATES IS FORMED ON THE SURFACE OF A SEMICONDUCTOR SUBSTRATE USING A TEMPERATURE AT WHICH SUBSTANTIALLY NO DIFFUSION OF THE IMPURITIES INTO THE SUBSTRATE WILL TAKE PLACE. THEN, THE SUBSTRATE IS HEATED TO SIMULTANEOUSLY DIFFUSE THE IMPURITIES INTO THE SUBSTRATE TO FORM A PLURALITY OF ABUTTING REGIONS IN THE SUBSTRATE SEPARATED BY JUNCTIONS. THE SEQUENCE OF REGIONS IN DISTANCE, WITH RESPECT TO THE SUBSTRATE SURFACE, IS CONTROLLED BY THE DIFFUSIVITY RATES OF THE SELECTED CONDUCTIVITY-DETERMINING IMPURITIES. THE COATING MAY BE A SINGLE LAYER OR A PLURALITY OF LAYERS, AT LEAST TWO OF WHICH CONTAIN DIFFERENT CONDUCTIVITY-DETERMINING IMPURITIES.
D R A W I N G

公开(公告)号：US3796614A

公开(公告)日：1974-03-12

申请号：US3796614D

申请日：1971-12-02

Applicant: IBM

Inventor： BASI J ,  LYONS V

IPC: H01L21/22 ,  C30B31/06 ,  C30B31/16 ,  H01L7/44

CPC classification number: C30B31/165 ,  C30B29/06 ,  C30B31/06 ,  Y10S148/056 ,  Y10S252/951 ,  Y10S438/909

Abstract: THE METHOD DISCLOSED DESCRIBES A PROCEDURE FOR CONTROLLING JUNCTION DEPTH AND SURFACE CONCENTRATION IN DIFFUSION OF ZINC IN GALLIUM ARSENIDE COMPRISING UTILIZING AN ALLOY OF SILICON AND ARSENIC WHEREIN THE TOTAL ARSENIC PRESENT IS BETWEEN ABOUT TWO AND FIFTY ATOMIC PERCENT AND UTILIZING A DIFFUSION TEMPERATURE BETWEEN 800 AND 1000*C.

公开(公告)号：US3776789A

公开(公告)日：1973-12-04

申请号：US3776789D

申请日：1972-05-01

Applicant: IBM

Inventor： BASI J ,  HULL E

IPC: H01L21/308 ,  C30B29/42 ,  H01L21/316 ,  H01L23/31 ,  H01L7/50

CPC classification number: H01L21/31679 ,  H01L21/02241 ,  H01L21/02255 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for the protecton of gallium arsenide surfaces comprises treating the surface with sodium oxychloride solution to form an interim protective film and subsequently removing the protective film utilizing sodium oxychloride and sodium carbonate prior to further processing.

Abstract translation: 用于保护砷化镓表面的方法包括用氯氧化钠溶液处理表面以形成临时保护膜，随后在进一步加工之前利用氯化钠和碳酸钠除去保护膜。

公开(公告)号：US3775201A

公开(公告)日：1973-11-27

申请号：US3775201D

申请日：1971-10-26

Applicant: IBM

Inventor： BASI J

IPC: B24B37/00 ,  H01L21/306 ,  H01L21/308 ,  H01L7/50

CPC classification number: H01L21/30625

Abstract: An improved method for polishing gallium phosphide planar surfaces is disclosed comprising positioning gallium phosphide wafers or slices in close adjacency to a polishing medium providing a relative motion between said wafer and polishing medium while providing a controlled predetermined flow of OBr ions to said wafers and polishing medium and continuing the relative motion until the wafer surface is polished to a smooth and featureless condition whereupon the wafers are washed and removed from the polishing mechanism.

Abstract translation: 公开了一种用于抛光磷化镓平面的改进方法，其包括将磷化镓晶片或切片紧邻抛光介质放置，所述抛光介质在所述晶片和抛光介质之间提供相对运动，同时向所述晶片提供受控的预定流量的OBr离子和抛光介质 并且继续相对运动，直到晶片表面被抛光到平滑和无特征的状态，从而抛光晶片被从抛光机构中去除。