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公开(公告)号：FR2357023A1
公开(公告)日：1978-01-27
申请号：FR7716793
申请日：1977-05-25
Applicant: IBM
Inventor： HUNG ROLAND Y , LEVINE JAMES L
Abstract: A deformographic membrane display system in which a semiconductor substrate, for example silicon, has an insulating layer such as SiO2 formed thereon with an array of holes formed in the insulating layer. Alternatively, the insulating layer may be omitted, with the holes being formed in the substrate. A reflective membrane, including a thin metal layer, is formed over the surface in which the holes are formed. Electrodes are formed in the silicon substrate directly beneath or in each of the holes. Control circuitry, which for example, may be formed utilizing metal oxide semiconductor field effect transistor (MOSFET) technology and/or bipolar technology, is formed in the silicon substrate for selectively energizing the electrodes. The portion of the membrane over a given hole is deformed in response to the electrode thereunder being energized by the control circuitry.
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公开(公告)号：CA1100614A
公开(公告)日：1981-05-05
申请号：CA279086
申请日：1977-05-25
Applicant: IBM
Inventor： HUNG ROLAND Y , LEVINE JAMES L
Abstract: A MEMBRANE DEFORMOGRAPHIC DISPLAY, AND METHOD OF MAKING A deformographic membrane display system in which a semiconductor substrate, for example silicon, has an insulating layer such as SiO2 formed thereon with an array of holes formed in the insulating layer. Alternatively, the insulating layer may be omitted, with the holes being formed in the substrate. A reflective membrane, including a thin metal layer, is formed over the surface in which the holes are formed. Electrodes are formed in the silicon substrate directly beneath or in each of the holes. Control circuitry, which for example, may be formed utilizing metal oxide semiconductor field effect transistor (MOSFET) technology and/or bipolar technology, is formed in the silicon substrate for selectively energizing the electrodes. The portion of the membrane over a given hole is deformed in response to the electrode thereunder being energized by the control circuitry.
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Patent Agency Ranking
公开(公告)号：DE3072133D1
公开(公告)日：1988-12-22
申请号：DE3072133
申请日：1980-05-09
Applicant: IBM
Inventor： FANG FRANK F , HUNG ROLAND Y
Abstract: A GaAs semiconductor integrated chip has circuit components (9, 10), an input photoelectric converter (4) providing input signals to said circuit components, and an output electrooptic converter (3) providing output signals from said circuit components. Optical fibres (6, 5) communicate the signals to and from the structure. An optical fibre (7) couples an electrooptic converter (18) and a photoelectric converter (13) to provide an on chip cross-over relative to an electrode (16).
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公开(公告)号：FR2316727A1
公开(公告)日：1977-01-28
申请号：FR7616136
申请日：1976-05-21
Applicant: IBM
Inventor： HUNG ROLAND Y
IPC: H01L21/265 , H01L21/316 , H01L29/78 , H01L21/331 , H01L21/60 , H01L29/20 , H01L29/73 , H01L21/18 , H01L29/66
Abstract: A method for fabricating an indium antimonide semiconductor device which includes anodizing through a portion of the thickness of an indium antimonide substrate containing an active impurity of a first type; selectively ion implanting an active impurity of a second type into the indium antimonide substrate; annealing; providing for ohmic electrical contact between preselected regions of the indium antimonide substrate and subsequently applied electrical contacts; and depositing a plurality of electrical contacts, a predetermined number of which are in ohmic electrical contact with the preselected regions of the substrate to thereby provide the semiconductor device; and semiconductor device obtained thereby.
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公开(公告)号：CA1140660A
公开(公告)日：1983-02-01
申请号：CA348133
申请日：1980-03-21
Applicant: IBM
Inventor： FANG FRANK F , HUNG ROLAND Y
Abstract: ELECTROOPTICAL INTEGRATED CIRCUIT COMMUNICATION The overall performance of integrated circuit systems is enhanced by the use of optical drivers and receivers to send and receive information between the devices on the chip and between individual chips in a system. A single substrate of gallium arsenide employs both the high carrier mobility properties and the electrooptical signal conversion properties on a single substrate to provide both high performance electrical properties and high density and high performance communication properties. YO978-046
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公开(公告)号：CA1108738A
公开(公告)日：1981-09-08
申请号：CA305836
申请日：1978-06-20
Applicant: IBM
Inventor： HUNG ROLAND Y , SHIH KWANG K
Abstract: OPTICALLY ISOLATED MONOLITHIC LIGHT EMITTING DIODE ARRAY Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded concentrated wafer and selectively removing portions of the opposite side of the wafer adjacent to said p-n junctions in order to permit light of varying colors to escape and to provide optical isolation. Metallurgical pads are provided to each of the p-n junctions for solder reflow type connections.
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公开(公告)号：CA1061015A
公开(公告)日：1979-08-21
申请号：CA254110
申请日：1976-06-04
Applicant: IBM
Inventor： HUNG ROLAND Y
IPC: H01L29/78 , H01L21/265 , H01L21/316 , H01L21/331 , H01L21/60 , H01L29/20 , H01L29/73 , H01L21/18 , B01J17/00
Abstract: FABRICATION OF SEMICONDUCTOR DEVICE A method for fabricating an indium antimonide semiconductor device which includes anodizing through a portion of the thickness of an indium antimonide substrate containing an active impurity of a first type; selectively ion implanting an active impurity of a second type into the indium antimonide substrate; annealing; providing for ohmic electrical contact between preselected regions of the indium antimonide substrate and subsequently applied electrical contacts; and depositing a plurality of electrical contacts, a predetermined number of which are in ohmic electrical contact with the preselected regions of the substrate to thereby provide the semiconductor device; and semiconductor device obtained thereby.
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