公开(公告)号：US3585087A

公开(公告)日：1971-06-15

申请号：US3585087D

申请日：1967-11-22

Applicant: IBM

Inventor： BLUM SAMUEL E ,  FOSTER LUTHER M ,  SHIH KWANG K ,  WOODALL JERRY M

IPC: C30B15/00 ,  H01L21/208 ,  H01L33/00 ,  H01L7/46 ,  H01L7/00 ,  H01L7/38

CPC classification number: C30B15/007 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L33/00 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/134 ,  Y10S438/919

Abstract: GREEN-EMITTING ELECTROLUMINESCENT GALLIUM PHOSPHIDE DIODES ARE GROWN BY LIQUID PHASE EPITAXY. A GA-GAP MELT CONTAINED IN A COVERED CRUICIBLE IS PLACED IN A VERTICAL FURNACE. A GAP SUBSTRATE WAFER IS INSERTED INTO THE MELT WHICH HAS BEEN MAINTAINED AT A TEMPERATURE OF ABOUT 1110-1140*C. AN N-TYPE GAP LAYER IS PRODUCED BY THE ADDITION OF A DOPANT SELECTED FROM S, SE, AND TE TO THE MELT WHICH IS SLOWLY COOLED TO A TEMPERATURE OF ABOUT 1070-1100*C., AT WHICH TIME THE MELT IS COUNTERDOPED WITH AN ACCEPTOR DOPANT, E.G., ZN OR CD. THE MELT IS FURTHER COOLED TO ABOUT 1030-1060*C., CAUSING THE GROWTH OF A P-TYPE LAYER, AFTER WHICH THE SUBSTRATE IS REMOVED FROM THE METAL AND FURTHER COOLED TO AMBIENT TEMPERATURES. ELECTROLUMINESCENT DIODES ARE THEN PREPARED BY THINNING THE SUBSTRATE SIDE OF THE WAFER TO REDUCE SERIES RESISTANCE. AU-ZN AND AU-SN ALLOY DOTS ARE APPLIED TO THE P AND N SIDE RESPECTIVELY, OF SAWED OR CLEAVED SECTIONS OF THE WAFER. GREEN-EMITTING DIODES PREPARED BY THE ABOVE METHOD HAVE EFFICIENCIES OF ABOUT 2.7X10-4, WHICH EFFICIENCIES CAN BE IMPROVED BY A FACTOR OF 2 OR MORE BY COATING THE DIODES WITH ANTI-REFLECTIVE EPOXY COATINGS. THE DIODES FIND UTILITY AS PANEL INDICATORS.

公开(公告)号：JPS61254376A

公开(公告)日：1986-11-12

申请号：JP1599086

申请日：1986-01-29

Applicant: IBM

Inventor： AVIRAM ARI ,  SHIH KWANG K

IPC: B41J31/00 ,  B41J31/02 ,  B41J31/05 ,  B41M5/24 ,  B41M5/26 ,  B41M5/382 ,  B41M5/40 ,  B41M5/41

Abstract: The invention relates to a resistive ribbon (10) for use in a resistive ribbon thermal transfer printing process, of the type comprising a resistive layer (12) which produces localised heating to effect printing when an electric current is passed therethrough and which has a non-linear current-voltage characteristic occurring at a knee voltage, an ink layer (16) comprising an ink which is transferable when heated by the localised heating, and a metal layer (14) located between between the resistive layer (12) and the ink layer (16) and along which the electrical current passes. … A ribbon according to the invention is characterised by the inclusion of an electrical interface layer (18) located between the resistive layer (12) and the metal layer (14) and serving to increase the interface resistance between the resistive layer (12) and the metal layer (14) and to increase the knee voltage of the current-voltage characteristic.

公开(公告)号：CA1108738A

公开(公告)日：1981-09-08

申请号：CA305836

申请日：1978-06-20

Applicant: IBM

Inventor： HUNG ROLAND Y ,  SHIH KWANG K

IPC: H01L27/15 ,  H01L33/00

Abstract: OPTICALLY ISOLATED MONOLITHIC LIGHT EMITTING DIODE ARRAY Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded concentrated wafer and selectively removing portions of the opposite side of the wafer adjacent to said p-n junctions in order to permit light of varying colors to escape and to provide optical isolation. Metallurgical pads are provided to each of the p-n junctions for solder reflow type connections.

公开(公告)号：CA1192399A

公开(公告)日：1985-08-27

申请号：CA442155

申请日：1983-11-29

Applicant: IBM

Inventor： AVIRAM ARI ,  SHIH KWANG K

IPC: B41M5/382 ,  B41J31/00 ,  B41J31/02 ,  B41M5/20 ,  B41M5/24 ,  B41M5/26

Abstract: METAL-INSULATOR RESISTIVE RIBBON FOR THERMAL TRANSFER PRINTING A resistive ribbon printing technique is described in which the ribbon includes a resistive layer comprised of a metal-wide bandgap insulator combination. The ribbon also includes a support layer, where the support function can be provided by the resistive layer, and a fusible ink layer. Electrical current through the resistive layer produces heat which locally melts the ink for transfer to an adjacent receiving medium. The wide bandgap insulator of the resistive layer must have a bandgap of at least three volts. Many different metals and insulators can be used, where the relative amounts of metal and insulator are chosen to provide a desired resistivity for any type of resistive ribbon printing application.

公开(公告)号：CA1192398A

公开(公告)日：1985-08-27

申请号：CA441819

申请日：1983-11-24

Applicant: IBM

Inventor： AVIRAM ARI ,  SHIH KWANG K

IPC: B41M5/392 ,  B41J31/00 ,  B41J31/02 ,  B41M5/26 ,  B41M5/382

Abstract: CHEMICAL HEAT AMPLIFICATION IN THERMAL TRANSFER PRINTING Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and include nonaromatic azo compounds, peroxides, and strained valence compounds, such as monomers, dimers, trimers of the type which change their chemical bonding when they decompose to either a valence isomer or break into a number of molecular species.

公开(公告)号：CA1241568A

公开(公告)日：1988-09-06

申请号：CA502800

申请日：1986-02-26

Applicant: IBM

Inventor： AVIRAM ARI ,  SHIH KWANG K

IPC: B41J31/00 ,  B41J31/02 ,  B41J31/05 ,  B41M5/24 ,  B41M5/26 ,  B41M5/382 ,  B41M5/40 ,  B41M5/41

Abstract: An improved resistive ribbon for thermal transfer printing is provided, where the ribbon includes a resistive layer, a metal current-return layer, a fusible ink layer, and an electric interface layer located between the resistive layer and the metal layer. The electrical interface layer is sufficiently thin so as not to impair the required mechanical properties of the ribbon (such as flexibility, stability, durability, etc.), and has as its primary function the enhancement of the electrical properties of the ribbon. Specifically, interface resistance and/or knee voltage of the current-voltage characteristics of the ribbon are enhanced by the electrical interface layer. Preferred compositions of the interface layer include alkylalkoxy silanes of a specific formula, and especially nonsymmetrical compounds of that formula.

公开(公告)号：CA974632A

公开(公告)日：1975-09-16

申请号：CA150317

申请日：1972-08-28

Applicant: IBM

Inventor： BLUM JOSEPH M ,  SHIH KWANG K

IPC: H01L33/00 ,  C30B19/06 ,  C30B19/10 ,  H01L27/15

公开(公告)号：CA1191344A

公开(公告)日：1985-08-06

申请号：CA419826

申请日：1983-01-19

Applicant: IBM

Inventor： AVIRAM ARI ,  SHIH KWANG K

IPC: B41J31/00 ,  B41M5/26 ,  B41M5/382

Abstract: METAL-SEMICONDUCTOR RESISTIVE RIBBON FOR THERMAL TRANSFER PRINTING AND METHOD FOR USING A resistive ribbon for thermal transfer printing comprising a support layer bearing a fusible ink composition and a thin aluminum layer upon which is deposited a resistive layer of off-stoichiometric metal silicide is disclosed. Also disclosed are appropriate power sources for using the resistive ribbon, as well as methods for non-impact printing employing the disclosed ribbon.

公开(公告)号：CA1109372A

公开(公告)日：1981-09-22

申请号：CA338885

申请日：1979-10-31

Applicant: IBM

Inventor： SHIH KWANG K

IPC: B41J2/135 ,  G01N21/88 ,  H01L21/304 ,  H01L21/306 ,  C09K13/00

Abstract: PYROCATECHOL-AMINE-WATER SOLUTION FOR THE DETERMINATION OF DEFECTS The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are detectable by the naked eye.

公开(公告)号：CA1107378A

公开(公告)日：1981-08-18

申请号：CA305582

申请日：1978-06-15

Applicant: IBM

Inventor： FANG FRANK F ,  SHIH KWANG K

IPC: H01L27/15 ,  H01L33/00

Abstract: MULTICOLOR LIGHT EMITTING DIODE ARRAY Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB1-xCx semiconductor. Diodes emitting various light colors can selectively be formed in different regions of the gradient by etching away a portion of the graded region. Arrays of colored light emitting diodes can be made by the techniques of diffusion and selective etching of the graded material.