公开(公告)号：DE2860635D1

公开(公告)日：1981-08-06

申请号：DE2860635

申请日：1978-06-01

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  HUNTER WILLIAM RALPH ,  ORMOND JR DOUGLAS WILLIAM

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/306 ,  H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/322 ,  H01L21/762

Abstract: A method of manufacturing semiconductor devices of the type wherein regions of oxide such as silicon oxide recessed or inset in a silicon substrate are formed by oxidation of the silicon with the use of a masking layer protecting locally against the oxidation. In order to prevent the formation of a projecting oxide beak under the masking layer a nitride oxidation mask is applied directly to the substrate which has been previously ion-implanted to a controlled depth and then annealed to generate a dense dislocation network array on the substrate surface to prevent mechanical stress defects which normally would occur when a nitride mask is applied directly to a substrate.