公开(公告)号：EP0042380A4

公开(公告)日：1983-04-18

申请号：EP80901014

申请日：1979-12-28

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ISAAC RANDALL DUANE ,  MING TAK HUNG

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/331 ,  H01L23/485 ,  H01L29/10 ,  H01L21/22 ,  H01L21/20 ,  H01L21/265

CPC classification number: H01L21/033 ,  H01L23/485 ,  H01L29/1004 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making a transistor having base, collector, and emitter regions, where the impurity doping profile of the intrinsic (32) and extrinsic (22) base regions can closely approximate that which is ideal for the transistor. The extrinsic (22) and intrinsic (32) base regions are formed in separate steps, where the extrinsic base region (22) is formed first, followed by formation of the intrinsic base region (32). The portion of the extrinsic base region located over the area where the intrinsic base region is to be formed is removed, leaving an opening (26) through which both the emitter (30) and the intrinsic base regions (32) are formed. Thus, the effect of the step in which the extrinsic base region is formed is removed prior to formation of the intrinsic base region. Furthermore, the extrinsic base region is protected during formation of the intrinsic base region. This technique can be applied to processes using either ion implantation or diffusion to form the emitter and base regions of the transistor.

公开(公告)号：DE2967588D1

公开(公告)日：1986-04-24

申请号：DE2967588

申请日：1979-12-28

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ISAAC RANDALL DUANE ,  MING TAK HUNG

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/331 ,  H01L23/485 ,  H01L29/10 ,  H01L21/22 ,  H01L21/20 ,  H01L21/265

公开(公告)号：IT1150096B

公开(公告)日：1986-12-10

申请号：IT2672180

申请日：1980-12-18

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ISAAC RANDALL DUANE ,  TAK HUNG NING

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/331 ,  H01L23/485 ,  H01L29/10 ,  H01L

公开(公告)号：DE2966452D1

公开(公告)日：1984-01-05

申请号：DE2966452

申请日：1979-12-04

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  GAENSSLEN FRITZ HEINRICH ,  JAEGER RICHARD CHARLES

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/10 ,  H01L29/167

公开(公告)号：DE2861841D1

公开(公告)日：1982-07-08

申请号：DE2861841

申请日：1978-06-22

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ZIRINSKY STANLEY

IPC: H01L21/60 ,  H01B13/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  H01L29/62

Abstract: A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.

公开(公告)号：IT1164542B

公开(公告)日：1987-04-15

申请号：IT2813679

申请日：1979-12-18

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  GAENSSLEN FRITZ HEINRICH ,  JAEGER RICHARD CHARLES

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/10 ,  H01L29/167 ,  H01L

公开(公告)号：DE2962159D1

公开(公告)日：1982-03-25

申请号：DE2962159

申请日：1979-12-04

Applicant: IBM

Inventor： CROWDER BILLY LEE

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/285

公开(公告)号：FR2280978A1

公开(公告)日：1976-02-27

申请号：FR7517193

申请日：1975-05-27

Applicant: IBM

Inventor： BLUM JOSEPH MARTIN ,  CROWDER BILLY LEE ,  MCGRODDY JAMES CLEARY

IPC: H01L21/265 ,  H01L33/00 ,  H01S5/00 ,  H01S5/20 ,  H01S5/40 ,  H01S3/18

Abstract: A method for improving the current confinement capacity of a double heterojunction laser by using a high energy implantation of oxygen in the regions of an injection laser surrounding the active region of such laser so as to make such regions semi-insulating.

公开(公告)号：IT1164527B

公开(公告)日：1987-04-15

申请号：IT2774479

申请日：1979-11-30

Applicant: IBM

Inventor： CROWDER BILLY LEE

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L

公开(公告)号：DE2860635D1

公开(公告)日：1981-08-06

申请号：DE2860635

申请日：1978-06-01

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  HUNTER WILLIAM RALPH ,  ORMOND JR DOUGLAS WILLIAM

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/306 ,  H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/322 ,  H01L21/762

Abstract: A method of manufacturing semiconductor devices of the type wherein regions of oxide such as silicon oxide recessed or inset in a silicon substrate are formed by oxidation of the silicon with the use of a masking layer protecting locally against the oxidation. In order to prevent the formation of a projecting oxide beak under the masking layer a nitride oxidation mask is applied directly to the substrate which has been previously ion-implanted to a controlled depth and then annealed to generate a dense dislocation network array on the substrate surface to prevent mechanical stress defects which normally would occur when a nitride mask is applied directly to a substrate.