公开(公告)号：JPH10144793A

公开(公告)日：1998-05-29

申请号：JP29379297

申请日：1997-10-27

Applicant: IBM

Inventor： EDWARD C CONEY III ,  HYUN KEE LEE ,  THOMAS L MCDIVITT ,  ANTHONY K STAMPER

IPC: H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To impact deterioration resistance to a metal touching an insulating substance containing fluorine by providing a barrier layer containing fluorine between the insulating material containing fluorine and the metal thereby limiting diffusion of fluorine from the insulating material to the metal. SOLUTION: A metallization has a tungsten via 20 for interconnecting aluminum metallizations 23, 34 through a fluorinated insulation layer 22 of SiZF2- Z (0