公开(公告)号：JP2010251321A

公开(公告)日：2010-11-04

申请号：JP2010093002

申请日：2010-04-14

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANTHONY K STAMPER ,  COONEY III EDWARD CRANDAL ,  ANDERSON FELIX PATRICK ,  MCDEVITT THOMAS LEDDY

IPC: H01H49/00 ,  B81B3/00 ,  B81C1/00 ,  H01H59/00 ,  H01L23/14

CPC classification number: H01H59/0009 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a vertical integrated MEMS switch which can overcome conventional defects or restriction, a design structure and a manufacturing method of such a vertical switch. SOLUTION: The manufacturing method of a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供可以克服传统缺陷或限制的垂直集成MEMS开关，这种垂直开关的设计结构和制造方法。 解决方案：MEMS开关的制造方法包括在晶片中形成至少两个垂直延伸的通孔并用金属填充至少两个垂直延伸的通孔以形成至少两个垂直延伸的导线。 该方法还包括从底侧打开晶片中的空隙，使得垂直延伸的线中的至少一个可在空隙内移动。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010153799A

公开(公告)日：2010-07-08

申请号：JP2009248557

申请日：2009-10-29

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANTHONY K STAMPER ,  GAMBINO JEFFREY P

IPC: H01L27/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/8234 ,  H01L23/34 ,  H01L23/473 ,  H01L23/52 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/08 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786

CPC classification number: G06F17/5068 ,  H01L23/3672 ,  H01L23/473 ,  H01L23/481 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/12044

Abstract: PROBLEM TO BE SOLVED: To provide a structure and a design structure for forming a bonded semiconductor structure containing a cooling mechanism, and also to provide its forming method. SOLUTION: A bonded substrate comprising two semiconductor substrates is provided. Each semiconductor substrate includes a semiconductor device. At least one through-substrate via is provided between the two semiconductor substrates to provide a signal path therebetween. The bottom sides of the two semiconductor substrate are bonded by at least one bonding material layer that contains the cooling mechanism. In one embodiment, the cooling mechanism is a cooling channel through which a cooling fluid flows to cool the bonded semiconductor substrate during the operation of the semiconductor devices in the bonded substrate. In another embodiment, the cooling mechanism is a conductive cooling fin with two end portions and a continuous path therebetween. The cooling fin is connected to a heat sink to cool the bonded semiconductor substrate during the operation of the semiconductor devices in the bonded substrate. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于形成包含冷却机构的接合半导体结构的结构和设计结构，并且还提供其形成方法。 提供了包括两个半导体衬底的键合衬底。 每个半导体衬底包括半导体器件。 在两个半导体衬底之间提供至少一个贯通衬底通孔以在其间提供信号路径。 两个半导体基板的底面通过包含冷却机构的至少一个接合材料层粘合。 在一个实施例中，冷却机构是在键合衬底中的半导体器件的操作期间冷却流体通过该冷却通道冷却接合的半导体衬底的冷却通道。 在另一个实施例中，冷却机构是具有两个端部的导电冷却翅片和它们之间的连续路径。 冷却翅片连接到散热器以在键合衬底中的半导体器件的操作期间冷却接合的半导体衬底。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JPH10144793A

公开(公告)日：1998-05-29

申请号：JP29379297

申请日：1997-10-27

Applicant: IBM

Inventor： EDWARD C CONEY III ,  HYUN KEE LEE ,  THOMAS L MCDIVITT ,  ANTHONY K STAMPER

IPC: H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To impact deterioration resistance to a metal touching an insulating substance containing fluorine by providing a barrier layer containing fluorine between the insulating material containing fluorine and the metal thereby limiting diffusion of fluorine from the insulating material to the metal. SOLUTION: A metallization has a tungsten via 20 for interconnecting aluminum metallizations 23, 34 through a fluorinated insulation layer 22 of SiZF2- Z (0

公开(公告)号：JP2013048274A

公开(公告)日：2013-03-07

申请号：JP2012233911

申请日：2012-10-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation

Inventor： METE ERTURK ,  ROBERT A GROVES ,  JEFFREY B JOHNSON ,  ALVIN J JOSEPH ,  LIU QIZHI ,  EDMUND J SPROGIS ,  ANTHONY K STAMPER

IPC: H01L21/3205 ,  H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L23/522 ,  H01L27/06 ,  H01L29/737

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a backside contact structure and a method of fabricating the structure.SOLUTION: The method includes: forming a first dielectric layer 105 on a frontside of a substrate 100 having the frontside and an opposing backside; forming an electrically conductive first stud contact 140B in the first dielectric layer, the first stud contact extending through the first dielectric layer to the frontside of the substrate; thinning the substrate from the backside of the substrate to form a new backside of the substrate; forming a trench 165 in the substrate, the trench extending from the new backside of the substrate to the first dielectric layer, to expose a bottom surface of the first stud contact in the trench; and forming a conformal electrically conductive layer 170, 175 on the new backside of the substrate, sidewalls of the trench, exposed surfaces of the first dielectric layer and exposed surfaces of the first stud contacts, where the conductive layer is not thick enough to completely fill the trench.

Abstract translation: 要解决的问题：提供一种背面接触结构和制造该结构的方法。 解决方案：该方法包括：在具有前侧和相对的背面的基板100的前侧形成第一电介质层105; 在所述第一电介质层中形成导电的第一螺柱触头140B，所述第一螺柱触头延伸穿过所述第一电介质层到所述衬底的前侧; 从衬底的背面稀释衬底以形成衬底的新背面; 在衬底中形成沟槽165，沟槽从衬底的新背面延伸到第一介电层，以暴露沟槽中的第一柱形触头的底表面; 并且在衬底的新背面上形成共形导电层170,175，沟槽的侧壁，第一介电层的暴露表面和第一螺柱触头的暴露表面，其中导电层不够厚以至完全填充 沟渠。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011040748A

公开(公告)日：2011-02-24

申请号：JP2010178911

申请日：2010-08-09

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANTHONY K STAMPER ,  DUNN JAMES S ,  JOSEPH ALVIN JOSE

IPC: H01L21/3205 ,  H01L21/331 ,  H01L21/82 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L23/52 ,  H01L27/06 ,  H01L29/737

CPC classification number: H01L29/7378

Abstract: PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor, and to provide a method of manufacturing the heterojunction bipolar transistor.
SOLUTION: Semiconductor structures and methods of manufacturing semiconductors relate to heterojunction bipolar transistors. The method includes forming two devices connected by metal wires on a same wiring level. The metal wire of a first of the two devices is formed by selectively forming a metal cap layer on copper wiring structures.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供异质结双极晶体管，并提供制造异质结双极晶体管的方法。 解决方案：制造半导体的半导体结构和方法涉及异质结双极晶体管。 该方法包括在相同布线层上形成由金属线连接的两个器件。 两个器件中的第一个的金属线通过在铜布线结构上选择性地形成金属覆盖层而形成。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JPH1084042A

公开(公告)日：1998-03-31

申请号：JP21838297

申请日：1997-08-13

Applicant: IBM

Inventor： ANTHONY K STAMPER

IPC: H01L21/82 ,  H01L21/768 ,  H01L23/525 ,  H01L29/00

Abstract: PROBLEM TO BE SOLVED: To lower the pitch of polysilicon.fuse by a method wherein the tungsten at contact level in crack stops is laminated so as to coat the fuse with dielectric at a medium level for fitting a tungsten.barrier to the forming step of the crack stops. SOLUTION: A phosphorus silicate glass 22 is sticked on a substrate 20. Next, the first tungsten films 23 are sticked on the PSG layer 22 at contact level so as to form the tungsten.barrier regions 29 and the crack stops 23. Next, the first metallization layer is formed on the PSG layer 22 to stick an interlayer dielectric layer 24 on the PSG layer. Next, the interlayer dielectric layer 24 is etched away to form the second ring at a barrier level to be filled up with the second tungsten film 30 sticked on the surface of the first tungsten.films 23. Finally, a passivation film 25 and a polyimide layer 26 are sticked on the interlayer dielectric layer 24. Consequently, a thin oxide 21 and the thin interlayer dielectric layer 24 are formed on a polysilicon.fuse 21.

公开(公告)号：SG101499A1

公开(公告)日：2004-01-30

申请号：SG200106666

申请日：2001-10-29

Applicant: IBM

Inventor： ANTHONY K STAMPER ,  ARNE W BALLANTINE ,  DANIEL CHARLES EDELSTEIN

IPC: H01C17/06 ,  H01C7/00 ,  H01C17/26 ,  H01L27/08 ,  H01L29/8605

Abstract: A method for increasing an electrical resistance of a resistor that is within a semiconductor structure. A fraction of a surface layer of the resistor is oxidized with oxygen particles. In an embodiment, the fraction of the surface layer is heated by a beam of particles, such that the semiconductor structure is within a chamber that includes the oxygen particles as gaseous oxygen-comprising molecules. In an embodiment, the semiconductor structure is immersed in a chemical solution which includes the oxygen particles, wherein the oxygen particles includes oxygen-comprising liquid molecules, oxygen ions, or an oxygen-comprising gas dissolved in the chemical solution under pressurization. In an embodiment, the resistor is tested to determine whether the electrical resistance of the resistor after being oxidized with the oxygen particles is within a tolerance of a predetermined target resistance.

公开(公告)号：GB2505600B

公开(公告)日：2018-08-01

申请号：GB201321798

申请日：2012-03-14

Applicant: IBM

Inventor： CHRISTOPHER V JAHNES ,  ANTHONY K STAMPER

IPC: H01H1/00 ,  B81B3/00 ,  B81C1/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

公开(公告)号：SG82045A1

公开(公告)日：2001-07-24

申请号：SG1999006335

申请日：1999-12-10

Applicant: IBM

Inventor： PAUL D AGNELLO ,  LEENA P BUCHWALTER ,  JOHN PATRICK HUMMEL ,  BARBARA J LUTHER ,  ANTHONY K STAMPER

IPC: H01L21/04 ,  H01L21/28 ,  H01L23/522 ,  H01L21/318 ,  H01L21/768 ,  H01L21/316 ,  H01L21/325

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure.