公开(公告)号：DE1648241A1

公开(公告)日：1971-03-18

申请号：DEJ0035377

申请日：1967-12-29

Applicant: IBM

Inventor： GLANG REINHARD ,  I MAISSEL LEON

IPC: G01K7/22 ,  G01K13/00 ,  G01K

公开(公告)号：DE1465701A1

公开(公告)日：1969-02-13

申请号：DE1465701

申请日：1963-03-26

Applicant: IBM

Inventor： I MAISSEL LEON ,  R YOUNG DONALD

IPC: H01C17/26 ,  H01C17/00

Abstract: The value of a resistor comprising a thin film of metal on an insulating substrate, e.g. glass or ceramic, is adjusted by subjecting the resistance layer to heat impulses of duration not greater than 100 milliseconds, preferably the heat is provided by passing a pulse of electric current through the resistance. The resistor may be of tantalum deposited on a substrate to a thickness of 500 Angstroms by vacuum evaporation or sputtering in an argon atmosphere, the resistor being heated in an atmosphere of air for 50 hours at about 250 DEG C. before the value is finally adjusted by the method of the invention. Alternatively the resistor may comprise a first, relatively heat stable layer of tantalum deposited to 500 Angstroms in an argon atmosphere containing 0.05 -0.5% oxygen, the layer being subsequently heated for 15 minutes to a temperature of 600 DEG C. before depositing in a pure argon atmosphere, a second layer of tantalum to a thickness of 50 Angstroms, the double layer resistor then being heated in air to approximately 250 DEG C. for 25-50 hours. The adjustment of the value of the resistor by heat impulses according to the invention affects only the upper thinner layer which is thermally less stable. A circuit for carrying out the method of the invention is shown in Fig. 3 in which the position shown of ganged switches 42, 47 and 48 the resistor 25 whose value is to be adjusted is connected to a measuring bridge 46 whilst a capacitor 36, selected by switch 41, is charged from a source of high voltage 31. On operation of switches 42, 47 and 48 to the other position the capacitor 36 is discharged through resistor 25 to produce the pulse of heat in the resistance film.

公开(公告)号：DE1465702A1

公开(公告)日：1968-12-12

申请号：DE1465702

申请日：1963-04-13

Applicant: IBM

Inventor： I MAISSEL LEON

IPC: C23C14/18 ,  C23C14/58 ,  H01B1/00 ,  H01C7/00 ,  H01C17/00 ,  H01C17/06

Abstract: A method of manufacturing a resistor comprises depositing by vacuum evaporation or cathode sputtering a layer of a refractory metal (e.g. Ta, W, Re or Ti) on the surface of an electrically insulating substrate (e.g. of glass or ceramic) and thereafter filling fissure at the grain boundaries of the refractory metal layer by heating (e.g. in a vacuum oven at 500 DEG C.) the refractory metal layer and diffusing a further metal (e.g. Au, Ag, Pt or Pd) into the fissures, the amount of further metal being enough to substantially fill the fissures but less than an amount which would leave a layer of further metal on the surface of the refractory metal layer after the fissures have been filled. The resistor may subsequently be heated at 250 DEG C.in air to stabilize the resistance. The layers of refractory metal R and diffusing metal D may be deposited on the substrate in the order (a) R, D, (b) R, D, R, (c) D, R or (d) a homogeneous layer of R and D may be deposited from a source which is a mixture of the required metals. In (c) a bismuth oxide coating may be used between the substrate and diffusing metal to ensure good adhesion.