公开(公告)号：DE3852619T2

公开(公告)日：1995-07-06

申请号：DE3852619

申请日：1988-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  ICHISHITA FAITH S

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/31

Abstract: A plasma comprised of a fluorinated gas, an oxidant, and up to 15%-20% chlorofluorocarbon gas etches non-insulating materials such as tungsten and silicon at very high etch rates while providing enhanced etch rate ratios to photoresist and insulators.

公开(公告)号：DE3852619D1

公开(公告)日：1995-02-09

申请号：DE3852619

申请日：1988-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  ICHISHITA FAITH S

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/31

Abstract: A plasma comprised of a fluorinated gas, an oxidant, and up to 15%-20% chlorofluorocarbon gas etches non-insulating materials such as tungsten and silicon at very high etch rates while providing enhanced etch rate ratios to photoresist and insulators.