公开(公告)号：JPH0851096A

公开(公告)日：1996-02-20

申请号：JP14784295

申请日：1995-06-14

Applicant: IBM

Inventor： MAIKERU BARUKONII RAMIKA ,  SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  IIPIN SHIYAO ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  JIYASUTEIN WAI CHIYOU UON

IPC: G01N27/02 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To accurately control etching by arranging two conductive electrodes in a wet-type chemical bath so that they approach but do not contact at least one wafer and monitoring electrical characteristics between the two electrodes. CONSTITUTION: When a wafer 16 to be etched is loaded into an etchant bath 18 so that it approaches but does not contact an electrode 12, the electrode and the wafer 16 perform an ohmic contact or capacity-contact with the etchant bath 18. Then, with the electrode and its surrounding impedance, an AC current or voltage (continuos or pulsive) is applied to the electrode 12 and the passed current or generated potential is monitored by an electrical characteristic monitoring means 20. An impedance analyzer or a conductive bridge is used as an electrical characteristic monitoring means 20, thus accurately controlling the electrical characteristics of the etching process without any contact and obtaining a positive etching wafer at a low cost.

公开(公告)号：JPH0817791A

公开(公告)日：1996-01-19

申请号：JP15129895

申请日：1995-06-19

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  IIPIN SHIYAO ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  JIYASUTEIN WAI CHIYOU UON

IPC: C23F1/00 ,  G01N17/00 ,  G01N27/02 ,  G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To provide a non-contact method for monitoring a chemical etching process in a device in real time when etching at least one wafer during a wet- type chemical etching bath. CONSTITUTION: A stage for forming two conductive electrodes in a wet-type chemical bath so that they approach a wafer but do not contact it, a stage for monitoring electrical characteristics between two electrodes where the prescribed change of the electrical characteristics indicates the prescribed conditions of an etching process as a function of time in the etchant bath of at least one wafer, and a stage for recording a plurality of values of electrical characteristics as a function of time during etching are included. An instantaneous etching rate an average etching rate, and the etching end point can be determined from a plurality of recorded values and the corresponding time. Therefore, such method and device are useful, especially for a wet-type chemical etching station.