公开(公告)号：JPH07201807A

公开(公告)日：1995-08-04

申请号：JP31290294

申请日：1994-12-16

Applicant: IBM

Inventor： SUCHIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  ARURITSUCHI HOFUAA ,  REPINGU RII ,  BIKUTAA JIYOSEFU SHIRUBESUTORI

IPC: G01B11/06 ,  G01N21/00 ,  G01N21/45 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065

Abstract: PURPOSE: To monitor an etching end point of a thin film on the surface of a wafer to be etched in real time on the spot by normalizing a secondary higher- harmonic component in real time and responding to a 1st and a 2nd output signal. CONSTITUTION: A sending-out means sends a 1st beam 52 to a border surface 12 between a film 10 and a substrate 20 at a specific angle of incidence. The 1st beam 52 is reflected by the border surface 12 to generate a 2nd beam 62. The 2nd beam 62 includes secondary higher-harmonic component generated as the primary higher-harmonic component of the 1st beam 52. The secondary higher-harmonic components are generated by the reflection of the 1st beam 52 at the border surface 12. A normalizing means which responds to the 1st and 2nd output signals normalizes the sent-out secondary higher-harmonic component of the 1st beam 52 to generate a 3rd output signal, representing the generation of specific variation of the normalized sent-out secondary higher-harmonic component, and the specific vibration corresponds to the etching end point of the film 10 on the substrate 20. Namely, realtime field end point detection can be performed.

公开(公告)号：JPH08285515A

公开(公告)日：1996-11-01

申请号：JP8621696

申请日：1996-04-09

Applicant: IBM

Inventor： REEPIN RII ,  SUTEIIBUN JIYOOJI BAABII ,  AANORUDO HARUPERIN ,  TONII FUREDERITSUKU HAINTSU

IPC: G01B7/00 ,  G01B7/06 ,  G01R31/26 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To monitor the change in film thickness on the spot by inducing an eddy current in a film, monitoring current which changes as the thickness of the film changes, and eliminating a metal film from a semiconductor substrate. SOLUTION: A meted film 100 is formed on one surface of a wafer 102. A sensor 110 which has a circuit consisting of a capacitor 118 and a coil 114 wound around a ferrite toroid 112 is wound around the rear surface of the wafer 102. When the sensor 110 is excited by the sweeping output of a spectrum analyzer 130 via a resistor 120, a vibration current flows through the coil 114 and an eddy current is induced in the film 100 due to an alternate electromagnetic field. A sensor spectrum detected by the analyzer 130 has a resonance peak at a specific frequency related to a tank circuit and the film 100 being monitored. Then, the change in the film thickness can be monitored according to the change in peak amplitude, width, and resonance frequency due to the elimination of the film 100.

公开(公告)号：JPH0851096A

公开(公告)日：1996-02-20

申请号：JP14784295

申请日：1995-06-14

Applicant: IBM

Inventor： MAIKERU BARUKONII RAMIKA ,  SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  IIPIN SHIYAO ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  JIYASUTEIN WAI CHIYOU UON

IPC: G01N27/02 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To accurately control etching by arranging two conductive electrodes in a wet-type chemical bath so that they approach but do not contact at least one wafer and monitoring electrical characteristics between the two electrodes. CONSTITUTION: When a wafer 16 to be etched is loaded into an etchant bath 18 so that it approaches but does not contact an electrode 12, the electrode and the wafer 16 perform an ohmic contact or capacity-contact with the etchant bath 18. Then, with the electrode and its surrounding impedance, an AC current or voltage (continuos or pulsive) is applied to the electrode 12 and the passed current or generated potential is monitored by an electrical characteristic monitoring means 20. An impedance analyzer or a conductive bridge is used as an electrical characteristic monitoring means 20, thus accurately controlling the electrical characteristics of the etching process without any contact and obtaining a positive etching wafer at a low cost.

公开(公告)号：JPH0831904A

公开(公告)日：1996-02-02

申请号：JP15133195

申请日：1995-06-19

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU

IPC: C23F1/00 ,  C23F1/08 ,  G01B7/06 ,  G01N17/00 ,  G01N27/02 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To remove physical restriction for preventing contamination, the reliability of contacts and reproducibility by bringing the circular coils of a power generation coil and a detection coil close to a workpiece lest they are brought into contact with one another, and monitoring the etching condition of a wafer from the electric characteristics of the workpiece between the circular coils and a wet-type chemical etchant. CONSTITUTION: A wafer 16 to be etched is put into an etchant bath 18. It is brought close to a circular coils 12 lest they are brought into contact with one another so as to avoid a damage owing to contact. While a coat is removed from the wafer 16, the impedance of the etched wafer 16 and the peripheral condition change. The change is measured by applying appropriate AC or pulse current or a voltage signal to circular coils 11 and monitoring passed current or generated potential in the circular coils 13. Consequently, the electric characteristic of an etching process can be monitored without contact and the etching of the wafer is minutely controlled.

公开(公告)号：JPH0817791A

公开(公告)日：1996-01-19

申请号：JP15129895

申请日：1995-06-19

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  IIPIN SHIYAO ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  JIYASUTEIN WAI CHIYOU UON

IPC: C23F1/00 ,  G01N17/00 ,  G01N27/02 ,  G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To provide a non-contact method for monitoring a chemical etching process in a device in real time when etching at least one wafer during a wet- type chemical etching bath. CONSTITUTION: A stage for forming two conductive electrodes in a wet-type chemical bath so that they approach a wafer but do not contact it, a stage for monitoring electrical characteristics between two electrodes where the prescribed change of the electrical characteristics indicates the prescribed conditions of an etching process as a function of time in the etchant bath of at least one wafer, and a stage for recording a plurality of values of electrical characteristics as a function of time during etching are included. An instantaneous etching rate an average etching rate, and the etching end point can be determined from a plurality of recorded values and the corresponding time. Therefore, such method and device are useful, especially for a wet-type chemical etching station.

公开(公告)号：JPH08285514A

公开(公告)日：1996-11-01

申请号：JP8785896

申请日：1996-04-10

Applicant: IBM

Inventor： RIIPIN RII ,  SUCHIIBUN JIYOOJI BAABII ,  AANORUDO HARUPERIN ,  TONII FUREDERITSUKU HAINTSU

IPC: G01B7/00 ,  G01B7/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for monitoring a film thickness change on a ground body on the spot. SOLUTION: The thickness change of a film 100 on a ground body 102 such as a semiconductor substrate is monitored on the spot by inducing current in the film 100 and current change is detected when the thickness of the film 100 changes. In the case of a conductive film, an alternate electromagnetic field is generated by a sensor 110 including a capacitor 118 and an inductor 114 and an eddy current is induced in the film 100.

公开(公告)号：JPH0817790A

公开(公告)日：1996-01-19

申请号：JP14194995

申请日：1995-06-08

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  MADABU DATSUTA ,  TONII FUREDERITSUKU HAINTSU ,  REEPIN RII ,  YUUJIN HENRII RATSURAFU ,  RABUINDORA BUAAMAN SHIENOI

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/3213

Abstract: PURPOSE: To provide a non-contact method and device for monitoring a chemical etching process in the device when etching a work in a wet-type chemical etching bath. CONSTITUTION: A method includes a stage for providing a base 14 with a reference surface, a stage for fixing a work 20 to the base removably, a stage for providing at least two sensors 24a and 24b so that they approach the outer periphery of the surface of the work 20 but do not contact it, and a stage for monitoring electrical characteristics between at least two sensors, thus enabling the change in the provisions of electrical characteristics to indicate the prescribed conditions of an etching process.

公开(公告)号：JPH04340404A

公开(公告)日：1992-11-26

申请号：JP26866491

申请日：1991-09-20

Applicant: IBM

Inventor： TONII FUREDERITSUKU HAINTSU ,  GEIRII SUTEYUWAATO SERUUIN ,  JIYOSHII SHINGU ,  JIYON ANSONII SUPINATSUTEI JIY

IPC: B44C1/22 ,  C23F4/00 ,  G01B11/06 ,  H01L21/66

Abstract: PURPOSE: To monitor the deposition, reaction, modification and removing processes of a material on the spot with high accuracy by irradiating a portion of the surface of the material with a laser beam of predetermined frequency and observing the reflected beam at a specified frequency. CONSTITUTION: A pulse of frequency ω from a laser 12 is polarized through a polarizer 14 and passed through a filter 15 passing only the component of frequency ω and removing other components, especially second harmonic 2ω. A laser beam is reflected on a mirror 17 toward a desired portion of a sample 19 from which a coherent beam of frequency 2ω is generated and directed toward is mirror 21 together with the beam of frequency ω. The mirror 21 transmits the majority of wave of frequency ω and reflects the harmonic 2ω. A polarization beam splitter 24 divides the reflected wave into two through a polarization division and the divided waves are delivered on two detection channels. Outputs from photodetectors 27, 31 are then measured for each channel by means of high rate gate integrators 32, 33. A comparison circuit 34 subtracts the electric outputs of respective channels from each other to produce a difference signal which is used for monitoring the physical processing of the tample 19.