公开(公告)号：US3716422A

公开(公告)日：1973-02-13

申请号：US3716422D

申请日：1970-03-30

Applicant: IBM

Inventor： ING D ,  POGGE H

IPC: H01L21/20 ,  H01L21/22 ,  H01L29/8605 ,  H01L7/36 ,  C23C13/00

CPC classification number: H01L29/8605 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/2205 ,  Y10S148/007 ,  Y10S148/026 ,  Y10S148/037 ,  Y10S148/043 ,  Y10S148/05 ,  Y10S148/117 ,  Y10S438/916

Abstract: Autodoping from a diffused region in a substrate during growth of an epitaxial layer is prevented by growing a thin epitaxial layer over the entire surface of the substrate and then removing the epitaxial layer except for the portion over the diffused region. A second epitaxial layer is then grown over the surface of the substrate and the first epitaxial layer. The first epitaxial layer caps the diffused region to prevent autodoping into the second epitaxial layer during growth thereof over the surface of the substrate not having the diffused region therein.

Abstract translation: 通过在衬底的整个表面上生长薄的外延层，然后除去除了扩散区域上的部分之外的外延层，来防止外延层生长期间从衬底中扩散区域的自掺杂。 然后在衬底和第一外延层的表面上生长第二外延层。 第一外延层覆盖扩散区域以防止在其内部没有扩散区域的衬底的表面上生长期间自掺杂到第二外延层中。