公开(公告)号：US3716422A

公开(公告)日：1973-02-13

申请号：US3716422D

申请日：1970-03-30

Applicant: IBM

Inventor： ING D ,  POGGE H

IPC: H01L21/20 ,  H01L21/22 ,  H01L29/8605 ,  H01L7/36 ,  C23C13/00

CPC classification number: H01L29/8605 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/2205 ,  Y10S148/007 ,  Y10S148/026 ,  Y10S148/037 ,  Y10S148/043 ,  Y10S148/05 ,  Y10S148/117 ,  Y10S438/916

Abstract: Autodoping from a diffused region in a substrate during growth of an epitaxial layer is prevented by growing a thin epitaxial layer over the entire surface of the substrate and then removing the epitaxial layer except for the portion over the diffused region. A second epitaxial layer is then grown over the surface of the substrate and the first epitaxial layer. The first epitaxial layer caps the diffused region to prevent autodoping into the second epitaxial layer during growth thereof over the surface of the substrate not having the diffused region therein.

Abstract translation: 通过在衬底的整个表面上生长薄的外延层，然后除去除了扩散区域上的部分之外的外延层，来防止外延层生长期间从衬底中扩散区域的自掺杂。 然后在衬底和第一外延层的表面上生长第二外延层。 第一外延层覆盖扩散区域以防止在其内部没有扩散区域的衬底的表面上生长期间自掺杂到第二外延层中。

公开(公告)号：US3765960A

公开(公告)日：1973-10-16

申请号：US3765960D

申请日：1970-11-02

Applicant: IBM

Inventor： LYONS V ,  POGGE H ,  BOSS D ,  KEMLAGE B

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L7/36 ,  C23C13/02

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  H01L21/74 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S438/916

Abstract: Autodoping is minimized during the growth of an epitaxial layer on a semiconductor substrate by contacting the substrate with a gaseous reaction mixture at a low pressure, substantially below atmospheric to deposit at least the initial capping layer. The reaction mixture contains a relatively minor portion of a semiconductor compound along with a carrier gas. Subsequently, a second gaseous reaction mixture containing a greater portion of a compound of a semiconductor material may be used to complete the deposition of the epitaxial layer. This is done merely to reduce the total growth cycle.

Abstract translation: 在半导体衬底上外延层的生长过程中，通过在基本上低于大气压的低压下将衬底与气态反应混合物接触，使自掺杂最小化，从而沉积至少初始的覆盖层。

公开(公告)号：BR7907087A

公开(公告)日：1980-07-22

申请号：BR7907087

申请日：1979-10-31

Applicant: IBM

Inventor： POGGE H

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/265 ,  H01L21/266 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L21/94 ,  H01L21/203 ,  H01L21/82 ,  H01L29/06

公开(公告)号：AT456860T

公开(公告)日：2010-02-15

申请号：AT02808338

申请日：2002-12-20

Applicant: IBM

Inventor： POGGE H ,  YU ROY

IPC: H01L25/065 ,  H01L21/44 ,  H01L21/56 ,  H01L21/60 ,  H01L21/768 ,  H01L21/98 ,  H01L23/48 ,  H01L23/485

公开(公告)号：ZA7905476B

公开(公告)日：1980-09-24

申请号：ZA7905476

申请日：1979-10-12

Applicant: IBM

Inventor： POGGE H

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/265 ,  H01L21/266 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L

CPC classification number: H01L21/743 ,  H01L21/0337 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/763 ,  Y10S148/131 ,  Y10T428/23929 ,  Y10T428/23979

公开(公告)号：ZA795476B

公开(公告)日：1980-09-24

申请号：ZA795476

申请日：1979-10-12

Applicant: IBM

Inventor： POGGE H

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/265 ,  H01L21/266 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L

公开(公告)号：BR7801029A

公开(公告)日：1979-01-02

申请号：BR7801029

申请日：1978-02-21

Applicant: IBM

Inventor： POGGE H

IPC: H01L27/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L29/00

Abstract: A process which utilizes an anodized porous silicon technique to form dielectric isolation on one side of a semiconductor device is described. Regions of silicon semiconductor are fully isolated from one another by this technique. The starting wafer typically is predominantly P with a P+ layer thereon. A P or N layer over the P+ layer is formed thereover such as by epitaxial growth. The surface of the silicon is oxidized and a photoresist layer applied thereto. Openings are formed in the photoresist. Openings are formed in the silicon dioxide using the photoresist as a mask and appropriate etching techniques. The openings in the silicon dioxide define the regions to be etched by reactive ion etching. Reactive ion etching is accomplished at least down to the P+ region. The structure is then subjected to the anodic etching technique which preferentially attacks the P+ layer to form porous silicon throughout the P+ layer. The structure is then placed in a thermal oxidation ambient until the porous silicon layer has been fully oxidized to silicon dioxide. The openings through the surface layer are filled up with oxide to fully isolate the P or N surface layer.

公开(公告)号：BR7707919A

公开(公告)日：1978-09-05

申请号：BR7707919

申请日：1977-11-28

Applicant: IBM

Inventor： POGGE H ,  MASTERS B ,  MADER S

IPC: H01L21/265 ,  H01L29/167 ,  H01L27/00