公开(公告)号：WO03069658A2

公开(公告)日：2003-08-21

申请号：PCT/US0303352

申请日：2003-02-04

Applicant: IBM

Inventor： CHU JACK O ,  ISMAIL KHALED

IPC: H01L21/331 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/337 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/161 ,  H01L29/165 ,  H01L29/73 ,  H01L29/78 ,  H01L29/786 ,  H01L27/00

CPC classification number: H01L29/78654 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/76256 ,  H01L21/76259 ,  H01L29/66916 ,  H01L29/78603

Abstract: A method for fabricating a strained Si based layer, devices manufactured in this layer, and electronic systems comprising such layers and devices are disclosed. The method comprises the steps of growing epitaxially a SiGe layer on a substrate, and creating a varying Ge concentration in this SiGe layer. The Ge concentration in the SiGe layer includes a unique Ge overshoot zone, where the Ge concentration is abruptly and significantly increased. The Si based layer is epitaxially deposited onto the SiGe layer, whereby is becomes tensilely strained. It is also disclosed that the strained Si based layer, typically Si or SiGe, can be transferred to a different bulk substrate, or to an insulator.

Abstract translation: 公开了一种制造应变Si基层的方法，该层制造的器件，以及包括这些层和器件的电子系统。 该方法包括以下步骤：在衬底上外延生长SiGe层，并在该SiGe层中产生变化的Ge浓度。 SiGe层中的Ge浓度包括独特的Ge过冲区域，其中Ge浓度突然显着增加。 将Si基层外延沉积到SiGe层上，由此变得拉伸应变。 还公开了应变Si基层（通常为Si或SiGe）可以转移到不同的体基板或绝缘体。

公开(公告)号：WO03069658B1

公开(公告)日：2004-05-27

申请号：PCT/US0303352

申请日：2003-02-04

Applicant: IBM

Inventor： CHU JACK O ,  ISMAIL KHALED

IPC: H01L21/331 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/337 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/161 ,  H01L29/165 ,  H01L29/73 ,  H01L29/78 ,  H01L29/786 ,  H01L27/00

CPC classification number: H01L29/78654 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/76256 ,  H01L21/76259 ,  H01L29/66916 ,  H01L29/78603

Abstract: A method for fabricating a strained Si based layer, devices manufactured in this layer, and electronic systems comprising such layers and devices are disclosed. The method comprises the steps of growing epitaxially a SiGe layer on a substrate, and creating a varying Ge concentration in this SiGe layer. The Ge concentration in the SiGe layer includes a unique Ge overshoot zone, where the Ge concentration is abruptly and significantly increased. The Si based layer is epitaxially deposited onto the SiGe layer, whereby is becomes tensilely strained. It is also disclosed that the strained Si based layer, typically Si or SiGe, can be transferred to a different bulk substrate, or to an insulator.

Abstract translation: 公开了一种用于制造应变Si基层的方法，在该层中制造的器件以及包括这种层和器件的电子系统。 该方法包括在衬底上外延生长SiGe层并在该SiGe层中产生变化的Ge浓度的步骤。 SiGe层中的Ge浓度包括独特的Ge过冲区，其中Ge浓度突然显着增加。 Si基层外延沉积到SiGe层上，由此变得张紧应变。 还公开了可将应变Si基层（通常为Si或SiGe）转移到不同的块状衬底或绝缘体上。

公开(公告)号：AU2003208985A1

公开(公告)日：2003-09-04

申请号：AU2003208985

申请日：2003-02-04

Applicant: IBM

Inventor： CHU JACK O ,  ISMAIL KHALED

IPC: H01L21/331 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/337 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/161 ,  H01L29/165 ,  H01L29/73 ,  H01L29/78 ,  H01L29/786 ,  H01L27/00

Abstract: A method for fabricating a strained Si based layer, devices manufactured in this layer, and electronic systems comprising such layers and devices are disclosed. The method comprises the steps of growing epitaxially a SiGe layer on a substrate, and creating a varying Ge concentration in this SiGe layer. The Ge concentration in the SiGe layer includes a unique Ge overshoot zone, where the Ge concentration is abruptly and significantly increased. The Si based layer is epitaxially deposited onto the SiGe layer, whereby is becomes tensilely strained. It is also disclosed that the strained Si based layer, typically Si or SiGe, can be transferred to a different bulk substrate, or to an insulator.