公开(公告)号：JPH1070274A

公开(公告)日：1998-03-10

申请号：JP19095797

申请日：1997-07-16

Applicant: IBM

Inventor： KEVIN COCK CHAN ,  JACK UUN CHIYUU ,  HARIIDO ETSUZUTSUDEIIN ISUMAIR ,  STEPHEN ANTHONY RISHIYUTON

IPC: H01L29/872 ,  H01L27/095 ,  H01L29/47 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To decrease the gate resistance significantly by forming a Schottky metal ohmic source/drain contact or an epitaxial ohmic contact and a self- aligned T type metal or a metal/polisilicon gate. SOLUTION: A sacrifice layer 14, a metal layer 16 eventually forming a Schottky barrier or a junction to a channel and an insulation layer 18 are formed on a substrate 12. The insulation layer 18 is applied with a resist and a lithography pattern is formed thus defining a gate window 19. The metal layer 16 and the sacrifice layer 14 are then alloyed to form a source-contact 22 without disturbing the sacrifice layer 14 in the gate window 19. The source- contact and a drain contact 22 form a Schottky barrier or junctions 23, 24 thus forming a channel 25 in the substrate 12. Thereafter, the sacrifice layer 14 is removed from the gate window 19 and a gate oxide 26 is deposited on the substrate 12 in the gate window 19 and on the side wall 27, 28 and the upper surface of the insulation layer 18.