公开(公告)号：JPH1070274A

公开(公告)日：1998-03-10

申请号：JP19095797

申请日：1997-07-16

Applicant: IBM

Inventor： KEVIN COCK CHAN ,  JACK UUN CHIYUU ,  HARIIDO ETSUZUTSUDEIIN ISUMAIR ,  STEPHEN ANTHONY RISHIYUTON

IPC: H01L29/872 ,  H01L27/095 ,  H01L29/47 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To decrease the gate resistance significantly by forming a Schottky metal ohmic source/drain contact or an epitaxial ohmic contact and a self- aligned T type metal or a metal/polisilicon gate. SOLUTION: A sacrifice layer 14, a metal layer 16 eventually forming a Schottky barrier or a junction to a channel and an insulation layer 18 are formed on a substrate 12. The insulation layer 18 is applied with a resist and a lithography pattern is formed thus defining a gate window 19. The metal layer 16 and the sacrifice layer 14 are then alloyed to form a source-contact 22 without disturbing the sacrifice layer 14 in the gate window 19. The source- contact and a drain contact 22 form a Schottky barrier or junctions 23, 24 thus forming a channel 25 in the substrate 12. Thereafter, the sacrifice layer 14 is removed from the gate window 19 and a gate oxide 26 is deposited on the substrate 12 in the gate window 19 and on the side wall 27, 28 and the upper surface of the insulation layer 18.

公开(公告)号：JP2001358156A

公开(公告)日：2001-12-26

申请号：JP2001137754

申请日：2001-05-08

Applicant: IBM

Inventor： KEVIN COCK CHAN ,  COHEN GUY MOSHE ,  RONEN ANDREW ROY ,  PAUL MICHAEL SOLOMON

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a silicide treating method for thin-film SOI device. SOLUTION: The self-aligned silicide-process contains a step for attaching a metal or an alloy the gate, source and drain structures formed on an SOI film a step for forming a first alloy by reacting the metal or the alloy with the SOI film at a first temperature, a step, for selectively etching the nonreactive layer of the metal (or the alloy), a step for attaching an Si film on the first alloy, a step for forming a second alloy by reacting the Si film at the second temperature and a step for selectively etching the nonreactive layer of the Si film.