公开(公告)号：JP2001148362A

公开(公告)日：2001-05-29

申请号：JP2000294683

申请日：2000-09-27

Applicant: IBM

Inventor： RUUPIN LEE ,  JAMES A GIRUHOORII ,  CLIFFORD O MORGAN ,  CONN WAY

IPC: B24B37/00 ,  B24B37/04 ,  G01N21/76 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a method for optimizing chemical and mechanical flattening for a wafer having a removal layer and a stopper layer. SOLUTION: A slurry is added to a grinding table including a grinding pad rotatable adequately and a platen and fitted to an interface between the grinding pad and a wafer. An gas sample is extracted continuously from the slurry and fed to the inside of a reactive product detecting device. The gas sample includes a reactive product generated when the grinding pad is engaged with a stopper layer. A first time corresponding to the first detection of the reactive product in the slurry is determined, and it is defined as a first reference point. A second time corresponding to the detection of the maximum volume of the reactive product in the slurry is determined, and it is defined as a second reference point. A signal calculated from the first and second points is obtained. The signal shows the uniformity in removal of the reactive product.