公开(公告)号：JP2002083793A

公开(公告)日：2002-03-22

申请号：JP2001193210

申请日：2001-06-26

Applicant: IBM

Inventor： LI LEPING ,  BARBEE STEVEN GEORGE ,  LEE ERIC JAMES ,  MARTIN FRANCISCO A ,  CONN WAY

IPC: H01L21/302 ,  B24B37/04 ,  B24B49/12 ,  G11B5/31 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a method for detecting an end point in chemical mechanical polishing(CMP) of a cloisonne structure. SOLUTION: A nitride layer 31 is stuck on the upper surface of a metal structure 21, at least and a metal oxide layer 22 is stuck on a metal structure 21 and the nitride layer 31. Next, the metal oxide layer 22 is polished using a CMP process while using a slurry, and the nitride layer 31 on the upper surface of the metal structure 21 is exposed. By polishing the nitride layer 31, ammonia is generated inside the slurry. The ammonia is extracted from the slurry as a gas, and according to the concentration of ammonia, a signal is generated. Then, according to the change of the signal, the CMP process is ended. As a suitable execution example, the metal oxide layer 22 is oxidized aluminium, the nitride layer 31 is aluminium nitride, and the nitride layer 31 is stuck on a substrate and the metal structure 21 as a conformal layer.

公开(公告)号：JP2004072089A

公开(公告)日：2004-03-04

申请号：JP2003175593

申请日：2003-06-19

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LI LEPING ,  CONN WAY ,  SHINWAI WAN ,  STEVEN G BARBY ,  GILHOOLY JAMES ,  SCOTT R CLINE

IPC: B24B37/005 ,  B24B37/013 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3105 ,  B24B37/00 ,  B24B37/04

CPC classification number: B24B37/013 ,  B24B37/0056 ,  H01L21/31053

Abstract: PROBLEM TO BE SOLVED: To provide a device for an endpoint detecting method based on ammonia gas in a proceeding CMP cycle using acid CMP slurry and for a CMP process producing no ammnonia gas, in order to detect the endpoint of chemical mechanical polishing (CMP). SOLUTION: The device comprises constituent elements of (a) a moving means for collecting a sample of acid CMP slurry, (b) a transforming means for transforming the acid CMP slurry to basic slurry, (c) a measuring means for measuring ammonia gas in the acid slurry, and (d) a detecting means for making the notification of the end of the proceeding CMP cycle by using a signal. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2001148362A

公开(公告)日：2001-05-29

申请号：JP2000294683

申请日：2000-09-27

Applicant: IBM

Inventor： RUUPIN LEE ,  JAMES A GIRUHOORII ,  CLIFFORD O MORGAN ,  CONN WAY

IPC: B24B37/00 ,  B24B37/04 ,  G01N21/76 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a method for optimizing chemical and mechanical flattening for a wafer having a removal layer and a stopper layer. SOLUTION: A slurry is added to a grinding table including a grinding pad rotatable adequately and a platen and fitted to an interface between the grinding pad and a wafer. An gas sample is extracted continuously from the slurry and fed to the inside of a reactive product detecting device. The gas sample includes a reactive product generated when the grinding pad is engaged with a stopper layer. A first time corresponding to the first detection of the reactive product in the slurry is determined, and it is defined as a first reference point. A second time corresponding to the detection of the maximum volume of the reactive product in the slurry is determined, and it is defined as a second reference point. A signal calculated from the first and second points is obtained. The signal shows the uniformity in removal of the reactive product.

公开(公告)号：JP2000031102A

公开(公告)日：2000-01-28

申请号：JP11778999

申请日：1999-04-26

Applicant: IBM

Inventor： REEPIN RII ,  JAMES ALBERT GILHOOLEY ,  CLIFFORD OWEN MORGAN ,  CONN WAY ,  YU CHIENFAN ,  WILLIAM JOSEPH SALOWITZ

IPC: H01L21/302 ,  B24B37/013 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/66 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To detect end point for a target film lying on a stopper film by monitoring a reaction product during removal of the target film with a process that generates the chemical-reaction product from either the stopper film or the target film. SOLUTION: A target film is removed by a process that generates a chemical- reaction product selectively from a stopper film or from the target film. Namely, in chemical-mechanical polishing of a substrate 100 on which a target film 104 of an oxide (SiO2) lies on a stopper film 102 of a nitride (Si3N4) with slurry (mixture of micro-silica, water, and KOH), ammonium (NH3) is generated by a chemical reaction when the removal reaches the boundary 106. The level change of the ammonium in the slurry indicates that the removal reaches the underlying nitride film, and consequently, by monitoring the level of ammonium in the slurry, end point of the oxide film removal can be judged. When the end point is reached, the polishing is stopped.