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公开(公告)号：GB2596742A
公开(公告)日：2022-01-05
申请号：GB202114702
申请日：2020-03-26
Applicant: IBM
Inventor： HSUEH-CHUNG CHEN , YONGAN XU , YANN MIGNOT , JAMES KELLY , LAWRENCE CLEVENGER
IPC: H01L21/28 , H01L21/336 , H01L21/768
Abstract: A technique relates to a method and a semiconductor device. Mandrels are formed on a substrate, the mandrels including a first metal layer. A second metal layer is formed on the substrate adjacent to the first metal layer, the first and second metal layers being separated by spacer material.
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