公开(公告)号：JP2001313372A

公开(公告)日：2001-11-09

申请号：JP2001090567

申请日：2001-03-27

Applicant: IBM

Inventor： JENNIFER D LYNCH ,  WILBUR D PRISER ,  STAMPER ANTHONY K ,  STEVEN A SAINT ONGE

IPC: H01L21/28 ,  H01L21/283 ,  H01L21/70 ,  H01L21/768 ,  H01L21/822 ,  H01L23/522 ,  H01L27/02 ,  H01L27/04 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable chip-on-capacitor. SOLUTION: The capacitor (94) in a semiconductor device (20) has a lower copper plate (30) in a damascene/trench (22), barrier layers (56, 180a) disposed above the lower plate, a dielectric layer (60) disposed above the barrier layers and an upper plate (96) above the dielectric layer. Another embodiment of this invention is capacitors (296, 396) in a semiconductor device, which has two lower plates (230, 231, 330, 331) mutually separated, dielectric layers (260, 360) above the lower plate and upper plates (296, 396) above the dielectric layer which covers the lower plate, extends preferably across it. This invention further includes a method for manufacturing the capacitor of such a constitution.