公开(公告)号：JPS5745952A

公开(公告)日：1982-03-16

申请号：JP10349781

申请日：1981-07-03

Applicant: Ibm

Inventor： JIYOSEFU SUKINAA ROGAN ,  JIYON RESUTAA MOUAA FUOOSU ,  ROORA BESU ROSUMAN ,  JIERARUDEIN KOGIN SHIYUWARUTSU ,  CHIYAARUZU RAMUBAATO SUTANDORE

IPC: H01L21/3205 ,  H01L21/48 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/4846 ,  H01L21/7688 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S438/951 ,  H01L2924/00

公开(公告)号：JPS57155383A

公开(公告)日：1982-09-25

申请号：JP17909681

申请日：1981-11-10

Applicant: IBM

Inventor： POORU MAACHIN SHIYAIBURU ,  JIERARUDEIN KOGIN SHIYUWARUTSU

IPC: H01L21/302 ,  C23F1/00 ,  C23F4/00 ,  H01L21/3065 ,  H05K3/06 ,  H05K3/38

Abstract: A composite mask (5A, 6A) is formed by sequentially depositing blanket layers (5) and (6) of molybdenum and of a material respectively selected from the group consisting of MgO and Al2O3 on the surface of a copper layer (3), and producing in these layers (5) and (6) a pattern of openings corresponding to the negative of the desired copper pattern (3). Using said mask (5A, 6A) the portions of copper layer (3) exposed in said openings are removed, preferably by dry etching. MgO or Al2O3 adhere well to Mo and Mo adheres well to copper. The Mo layer (5A) also serves as a diffusion barrier for the copper. … The method is applicable in forming copper interconnect metallurgy for components such as semiconductor or dielectric substrates.

公开(公告)号：JPS5544794A

公开(公告)日：1980-03-29

申请号：JP9995079

申请日：1979-08-07

Applicant: IBM

Inventor： JIEROOMU MAIKERU ERUDORITSUJI ,  UENNYONGU RII ,  JIERARUDEIN KOGIN SHIYUWARUTSU

IPC: H01L21/302 ,  C23C8/12 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52