公开(公告)号：JPS6369238A

公开(公告)日：1988-03-29

申请号：JP19654787

申请日：1987-08-07

Applicant: IBM

Inventor： ABERNATHEY JOHN ROBERT ,  JOHNSON DAVID LOUIS ,  PAN PAI-HUNG ,  PAQUETTE CHARLES ARTHUR

IPC: H01L21/316 ,  H01L21/265 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51

公开(公告)号：DE3774052D1

公开(公告)日：1991-11-28

申请号：DE3774052

申请日：1987-08-21

Applicant: IBM

Inventor： ABERNATHEY JOHN ROBERT ,  JOHNSON DAVID LOUIS ,  PAN PAI-HUNG ,  PAQUETTE CHARLES ARTHUR

IPC: H01L21/316 ,  H01L21/265 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51

Abstract: The inventive method relates to the formation of a thin film of silicon oxynitride exhibiting a high breakdown voltage on a silicon substrate of a first conductivity type and comprises the steps of: forming a thin film of silicon oxynitride on the silicon substrate; forming a region of a second conductivity type in at least part of the silicon substrate by ion implantation through said thin film of silicon oxynitride; and annealing said silicon oxynitride film in a wet O2 ambient at a temperature between 700 DEG C and 1000 DEG C. Preferably the deposited layer is annealed additionally after the deposition and prior to the ion implantation. The method is applied in the formation of capacitor structures, like high capacitance storage capacitors for dynamic random access memory cells.