公开(公告)号：JP2000331954A

公开(公告)日：2000-11-30

申请号：JP2000131647

申请日：2000-04-28

Applicant: IBM

Inventor： ECONOMIKOS LAERTIS ,  JONATHAN FORUTAMIRAA ,  BIYONGYU PAAKU

IPC: H01L21/28 ,  H01L21/225 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To reduce contact resistance by containing a contact material layer and a dopant layer obtained from amorphous silicon in a contact material in contact with an epitaxial single-crystal silicon substrate and setting the concentration within a specific thickness range from the substrate to a specific, average dopant concentration. SOLUTION: A region, with a thickness of approximately 500 Å of a contact material in contact with an epitaxial single-crystal silicon substrate, is obtained from amorphous silicon with an average dopant concentration of at least 1020 dopant atom per cm3. A part with approximately 500 Å of a contact point includes the layer of a material, obtained from the non-doped amorphous silicon which is arranged alternately with the doping layer. Such a doping layer is separated by a layer obtained from the non-doped amorphous silicon, thus reducing the contact resistance.