公开(公告)号：GB2580556B

公开(公告)日：2021-09-08

申请号：GB202002960

申请日：2018-07-20

Applicant: IBM

Inventor： DANIEL WORLEDGE ,  JOPHN KENNETH DE BROSSE ,  JONATHAN ZANHONG SUN

IPC: G11C11/16 ,  G11C11/18 ,  H01L27/22

Abstract: Improved spin hall MRAM designs are provided that enable writing of all of the bits along a given word line together using a separate spin hall wire for each MTJ. In one aspect, a magnetic memory cell includes: a spin hall wire exclusive to the magnetic memory cell; an MTJ disposed on the spin hall wire, wherein the MTJ includes a fixed magnetic layer separated from a free magnetic layer by a tunnel barrier; and a pair of selection transistors connected to opposite ends of the spin hall wire. An MRAM device and method for operation thereof are also provided.

公开(公告)号：GB2580556A

公开(公告)日：2020-07-22

申请号：GB202002960

申请日：2018-07-20

Applicant: IBM

Inventor： DANIEL WORLEDGE ,  JOPHN KENNETH DE BROSSE ,  JONATHAN ZANHONG SUN

IPC: G11C11/16

Abstract: Improved spin hall MRAM designs are provided that enable writing of all of the bits along a given word line together using a separate spin hall wire for each MTJ. In one aspect, a magnetic memory cell includes: a spin hall wire exclusive to the magnetic memory cell; an MTJ disposed on the spin hall wire, wherein the MTJ includes a fixed magnetic layer separated from a free magnetic layer by a tunnel barrier; and a pair of selection transistors connected to opposite ends of the spin hall wire. An MRAM device and method for operation thereof are also provided.