公开(公告)号：GB2604799A

公开(公告)日：2022-09-14

申请号：GB202207118

申请日：2020-10-16

Applicant: IBM

Inventor： JONATHAN ZANHONG SUN

IPC: H01L43/08

Abstract: A modified double magnet tunnel junction (mDMTJ) structure (100) is provided which includes a non-magnetic, spin-conducting metallic layer (106) sandwiched between a magnetic free layer (108) and a first tunnel barrier layer (104); the first tunnel barrier layer (104) contacts a first magnetic reference layer (102). A second tunnel barrier layer (110) is located on the magnetic free layer (108) and a second magnetic reference layer (112) is located on the second tunnel barrier layer (110). The mDMTJ structure (100) exhibits efficient switching and speedy readout.

公开(公告)号：GB2580556A

公开(公告)日：2020-07-22

申请号：GB202002960

申请日：2018-07-20

Applicant: IBM

Inventor： DANIEL WORLEDGE ,  JOPHN KENNETH DE BROSSE ,  JONATHAN ZANHONG SUN

IPC: G11C11/16

Abstract: Improved spin hall MRAM designs are provided that enable writing of all of the bits along a given word line together using a separate spin hall wire for each MTJ. In one aspect, a magnetic memory cell includes: a spin hall wire exclusive to the magnetic memory cell; an MTJ disposed on the spin hall wire, wherein the MTJ includes a fixed magnetic layer separated from a free magnetic layer by a tunnel barrier; and a pair of selection transistors connected to opposite ends of the spin hall wire. An MRAM device and method for operation thereof are also provided.

公开(公告)号：GB2609775B

公开(公告)日：2025-04-16

申请号：GB202215020

申请日：2021-02-01

Applicant: IBM

Inventor： POUYA HASHEMI ,  BRUCE DORIS ,  JANUSZ JOZEF NOWAK ,  JONATHAN ZANHONG SUN

IPC: H10N50/10 ,  G11C11/15 ,  G11C11/16 ,  H10N50/01 ,  H10N50/85

Abstract: A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.

公开(公告)号：GB2580556B

公开(公告)日：2021-09-08

申请号：GB202002960

申请日：2018-07-20

Applicant: IBM

Inventor： DANIEL WORLEDGE ,  JOPHN KENNETH DE BROSSE ,  JONATHAN ZANHONG SUN

IPC: G11C11/16 ,  G11C11/18 ,  H01L27/22

Abstract: Improved spin hall MRAM designs are provided that enable writing of all of the bits along a given word line together using a separate spin hall wire for each MTJ. In one aspect, a magnetic memory cell includes: a spin hall wire exclusive to the magnetic memory cell; an MTJ disposed on the spin hall wire, wherein the MTJ includes a fixed magnetic layer separated from a free magnetic layer by a tunnel barrier; and a pair of selection transistors connected to opposite ends of the spin hall wire. An MRAM device and method for operation thereof are also provided.