公开(公告)号：DE1619967A1

公开(公告)日：1970-07-30

申请号：DE1619967

申请日：1967-02-15

Applicant: IBM

Inventor： GUNTHER DESSAUER RALPH ,  JOSEPH PATZNER EUGENE ,  ROBERT POPONIAK MICHAEL

IPC: C30B15/26 ,  H01L21/208 ,  H01J39/12

Abstract: 1,111,025. Crystal-pulling. INTERNATIONAL BUSINESS MACHINES CORPORATION. 22 Feb., 1967 [1 March, 1966], No. 8336/67- Heading B1S. [Also in Division G1] The growth conditions of a silicon crystal 20 are adjusted according to the output from a detector 30 sensing both visible light and infra-red radiation from the melt 10. Crystal pull, crucible rotation, crystal rotation, and crucible lift may be controlled, the last named in order to maintain constant the distance between the radiating surface and the detector. The detector may be movable for example by programme to monitor different points on the surface of the melt, monitoring of cooler points towards the periphery of the melt giving a larger crystal cross-section. The crucible is heated by an electrical resistance and covered by a belt jar into which impurities may be introduced. The surface may be viewed through polished fused quartz which may be kept free from deposits by a gas shield. Optimum viewing angles are discussed polarising attenuating discs being introduced as necessary in the radiation path. Control may be effected by a combination of a silicon controlled rectifier and a resetting magnetic amplifier. Suitable spectral bands and dimensions of field viewed are exemplified.