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公开(公告)号:DE3169035D1
公开(公告)日:1985-03-28
申请号:DE3169035
申请日:1981-07-14
Applicant: IBM
IPC: H01L23/52 , H01L21/28 , H01L21/3205 , H01L21/3213 , H01L21/768 , H05K3/08 , H01L21/306 , H01L21/26 , C23C28/00
Abstract: The aluminum/copper alloy conductors are made by forming a patterned layer of copper (21) on a layer of aluminum (15) applied to a substrate (11). The portion of the aluminum layer (15) which is not protected by the copper layer (21) is removed by reactive ion etching without heating substrate (11) and the resulting structure is then heated to cause the copper (21) to diffuse into, and alloy with the aluminum layer (15). … The method can in particular be used to form aluminum/copper alloy conductor lands in integrated circuit manufacture.