公开(公告)号：DE2966686D1

公开(公告)日：1984-03-22

申请号：DE2966686

申请日：1979-11-27

Applicant: IBM

Inventor： CHIU GEORGE TEIN-CHU ,  KITCHER JAMES ROBERT ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT NILS

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/31 ,  C23F1/00

Abstract: Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO2, and Si3N4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl4, water, and a material selected from the group consisting of the noble gases and oxygen.

公开(公告)号：DE3169035D1

公开(公告)日：1985-03-28

申请号：DE3169035

申请日：1981-07-14

Applicant: IBM

Inventor： CHIU GEORGE TEIN-CHU ,  JOSEPH ROBERT RODERICK ,  OZOLS GUNARS MIERVALDIS

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/08 ,  H01L21/306 ,  H01L21/26 ,  C23C28/00

Abstract: The aluminum/copper alloy conductors are made by forming a patterned layer of copper (21) on a layer of aluminum (15) applied to a substrate (11). The portion of the aluminum layer (15) which is not protected by the copper layer (21) is removed by reactive ion etching without heating substrate (11) and the resulting structure is then heated to cause the copper (21) to diffuse into, and alloy with the aluminum layer (15). … The method can in particular be used to form aluminum/copper alloy conductor lands in integrated circuit manufacture.

公开(公告)号：IT1165430B

公开(公告)日：1987-04-22

申请号：IT2812679

申请日：1979-12-18

Applicant: IBM

Inventor： CHIU GEORGE TEIN-CHU ,  KITCHER JAMES ROBERT ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT NILS

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L

Abstract: Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO2, and Si3N4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl4, water, and a material selected from the group consisting of the noble gases and oxygen.

公开(公告)号：DE3267357D1

公开(公告)日：1985-12-19

申请号：DE3267357

申请日：1982-03-12

Applicant: IBM

Inventor： FRIESER RUDOLF GRUENSPAN ,  MA WILLIAM HSIOH-LIEN ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT NILS

IPC: C23F4/00 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/08 ,  H01J37/32 ,  C23C14/00

Abstract: A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode (10) has a quartz plate (12) with a series of recesses (14) having disks (16) therein of Si, C, Al, W, Cr, Ti or Mo, in particular the same material as the object to be etched, and a ring (18) of preferably that same material around the outer edge of the plate (12). In one embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.

公开(公告)号：DE2860855D1

公开(公告)日：1981-10-22

申请号：DE2860855

申请日：1978-12-20

Applicant: IBM

Inventor： KITCHER JAMES ROBERT ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT

IPC: H01L21/302 ,  C23F4/00 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  C23C15/00 ,  H01L21/306 ,  H01L21/60