公开(公告)号：GB2578861B

公开(公告)日：2021-02-10

申请号：GB202003086

申请日：2018-08-02

Applicant: IBM

Inventor： THEODORE VAN KESSEL ,  JOSEPHINE CHANG ,  HENDRIK F HAMANN ,  TALIA SIMCHA GERSHON ,  SUPRATIK GUHA ,  JIAXING LIU

IPC: G01N27/416 ,  G01N33/00

Abstract: Low power combustible gas sensors using a thermocouple design are provided. In one aspect, a combustible gas sensor includes: at least one first electrode; at least one second electrode formed from a dissimilar material from the first electrode; and a catalytic material at an active reaction junction between the first electrode and the second electrode, wherein the active reaction junction between the first electrode and the second electrode forms a thermocouple. A sensing device is including, e.g., multiple sensors, and a method for sensing combustible gas using the present sensors are also provided.

公开(公告)号：GB2578861A

公开(公告)日：2020-05-27

申请号：GB202003086

申请日：2018-08-02

Applicant: IBM

Inventor： THEODORE VAN KESSEL ,  JOSEPHINE CHANG ,  HENDRIK F HAMANN ,  TALIA SIMCHA GERSHON ,  SUPRATIK GUHA ,  JIAXING LIU

IPC: G01N27/00

Abstract: Low power combustible gas sensors using a thermocouple design are provided.In one aspect, a combustible gas sensor includes: at least one first electrode; at least one second electrode formed from a dissimilar material from the first electrode; and a catalytic material at an active reaction junction between the first electrode and the second electrode,wherein the active reaction junction between the first electrode and the second electrode forms a thermocouple. A sensing device is including, e.g., multiple sensors, and a method for sensing combustible gas using the present sensors are also provided.

公开(公告)号：GB2518094B

公开(公告)日：2016-06-22

申请号：GB201423099

申请日：2013-05-15

Applicant: IBM

Inventor： JOSEPHINE CHANG ,  JEFFERY W SLEIGHT

IPC: H01L27/108 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/94

Abstract: A semiconductor nanowire is formed integrally with a wraparound semiconductor portion that contacts sidewalls of a conductive cap structure located at an upper portion of a deep trench and contacting an inner electrode of a deep trench capacitor. The semiconductor nanowire is suspended from above a buried insulator layer. A gate dielectric layer is formed on the surfaces of the patterned semiconductor material structure including the semiconductor nanowire and the wraparound semiconductor portion. A wraparound gate electrode portion is formed around a center portion of the semiconductor nanowire and gate spacers are formed. Physically exposed portions of the patterned semiconductor material structure are removed, and selective epitaxy and metallization are performed to connect a source-side end of the semiconductor nanowire to the conductive cap structure.