公开(公告)号：DE69517295T2

公开(公告)日：2000-12-21

申请号：DE69517295

申请日：1995-12-15

Applicant: IBM

Inventor： JOSHI VASANT ,  TEJWANI MANU JAMNADAS

IPC: H01L21/28 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/43

Abstract: A soft metal conductor for use in a semiconductor device that has an upper-most layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free surface upon polishing in a subsequent chemical mechanical polishing step.

公开(公告)号：DE69517295D1

公开(公告)日：2000-07-06

申请号：DE69517295

申请日：1995-12-15

Applicant: IBM

Inventor： JOSHI VASANT ,  TEJWANI MANU JAMNADAS

IPC: H01L21/28 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/43

Abstract: A soft metal conductor for use in a semiconductor device that has an upper-most layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free surface upon polishing in a subsequent chemical mechanical polishing step.