公开(公告)号：SE7608635A

公开(公告)日：1977-02-08

申请号：SE7608635

申请日：1976-07-30

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

CPC classification number: H01L21/26506 ,  H01L21/76 ,  H01L27/0921 ,  H01L29/0821 ,  H01L29/167 ,  Y10S148/024 ,  Y10S438/904

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：SE7608635L

公开(公告)日：1977-02-08

申请号：SE7608635

申请日：1976-07-30

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：SE415062B

公开(公告)日：1980-09-01

申请号：SE7608635

申请日：1976-07-30

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：AU501673B2

公开(公告)日：1979-06-28

申请号：AU1665476

申请日：1976-08-06

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L21/22 ,  H01L21/20 ,  H01L21/31 ,  H01L29/72

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.