公开(公告)号：SE7608635A

公开(公告)日：1977-02-08

申请号：SE7608635

申请日：1976-07-30

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

CPC classification number: H01L21/26506 ,  H01L21/76 ,  H01L27/0921 ,  H01L29/0821 ,  H01L29/167 ,  Y10S148/024 ,  Y10S438/904

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：SE7608635L

公开(公告)日：1977-02-08

申请号：SE7608635

申请日：1976-07-30

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：SE7510405L

公开(公告)日：1976-04-19

申请号：SE7510405

申请日：1975-09-17

Applicant: IBM

Inventor： CUOMO J J ,  WOODALL J M ,  ZIEGLER J F

IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F03G7/02 ,  F24J3/02

Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

公开(公告)号：SE415062B

公开(公告)日：1980-09-01

申请号：SE7608635

申请日：1976-07-30

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：AU501673B2

公开(公告)日：1979-06-28

申请号：AU1665476

申请日：1976-08-06

Applicant: IBM

Inventor： BURR P ,  JOY R C ,  ZIEGLER J F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L21/22 ,  H01L21/20 ,  H01L21/31 ,  H01L29/72

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：SE417638B

公开(公告)日：1981-03-30

申请号：SE7510405

申请日：1975-09-17

Applicant: IBM

Inventor： CUOMO J J ,  WOODALL J M ,  ZIEGLER J F

IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F24J3/02

Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.