公开(公告)号：JP2002050638A

公开(公告)日：2002-02-15

申请号：JP2001162425

申请日：2001-05-30

Applicant: IBM

Inventor： IVAN GEORGE COLGAN ,  KINOSHITA HISANORI ,  KITAHARA HIROAKI ,  KAI R SCHLUEPEN

IPC: G03F1/08 ,  G02F1/1368 ,  G03F7/20 ,  H01L21/027 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for opening a resist in a region where a semiconductor device is higher. SOLUTION: This method includes a step of forming a conductive layer on a channel-insulating layer for forming a part which is actually higher than a flat periphery region. A photoresist layer is formed on the high part and periphery region, and the amount of exposure to the photoresist on the conductive layer on the high part is reduced by the optical mask of a gray scale, so that the photoresist is left on the upper surface of the high part but will not remain in the periphery region after the development of the photoresist, thus forming a pattern in the photoresist. The conductive layer is etched by following the photoresist, and the electrode of source/drain which is self-aligned to the channel insulating layer is formed.