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公开(公告)号：AU544471B2
公开(公告)日：1985-05-30
申请号：AU7742681
申请日：1981-11-12
Applicant: IBM
Inventor： GRANDIA JOHANNES , KANE DANIEL FRANCIS O , SANTINI HUGO ALBERTO EMILIO
Abstract: This invention relates to an apparatus and a method for rotary electroplating a thin metallic film having a uniform thickness and composition throughout. The apparatus includes a flow-through jet plate (20) having nozzles (22) of increasing size and uniformly spaced radially therethrough, or the same sized nozzles with varying radial spacing therethrough so as to provide a differential flow distribution of the plating solution that impinges on a wafer (32) disposed on a cathode (34). The spacing and size of the nozzles (22) are critical to obtaining a uniform thickness. The electrical currents to the wafer and to the thieving ring (42) are controlled by variable resistors so as to keep the electrical current to the cathode (34) constant throughout the plating process. In a preferred embodiment the flow-through jet plate (20) has an anode (26) associated therewith in which the exposed area of the anode is maintained at a constant amount during the deposition. This method can simultaneously deposit with a uniform thickness and composition elements having a minimum gap or part size of 1 micrometer or less.
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公开(公告)号：AU7742681A
公开(公告)日：1982-06-03
申请号：AU7742681
申请日：1981-11-12
Applicant: IBM
Inventor： GRANDIA JOHANNES , KANE DANIEL FRANCIS O , SANTINI HUGO ALBERTO EMILIO
Abstract: This invention relates to an apparatus and a method for rotary electroplating a thin metallic film having a uniform thickness and composition throughout. The apparatus includes a flow-through jet plate (20) having nozzles (22) of increasing size and uniformly spaced radially therethrough, or the same sized nozzles with varying radial spacing therethrough so as to provide a differential flow distribution of the plating solution that impinges on a wafer (32) disposed on a cathode (34). The spacing and size of the nozzles (22) are critical to obtaining a uniform thickness. The electrical currents to the wafer and to the thieving ring (42) are controlled by variable resistors so as to keep the electrical current to the cathode (34) constant throughout the plating process. In a preferred embodiment the flow-through jet plate (20) has an anode (26) associated therewith in which the exposed area of the anode is maintained at a constant amount during the deposition. This method can simultaneously deposit with a uniform thickness and composition elements having a minimum gap or part size of 1 micrometer or less.
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