公开(公告)号：GB2616375B

公开(公告)日：2025-05-14

申请号：GB202308637

申请日：2021-11-10

Applicant: IBM

Inventor： KARTHIK YOGENDRA ,  ERIC RAYMOND EVARTS

IPC: G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H10B61/00 ,  H10N50/80

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a first heavy metal layer and a first magnetic tunnel junctions (MTJ) coupled to the first heavy metal layer. The first MTJ has a first area. The MRAM cell further comprises a second MTJ. The second MTJ is connected in series with the first MTJ, and the second MTJ has a second area that is different than the first area. The second MTJ shared a reference layer with the first MTJ. The MRAM cell further comprises a second heavy metal layer that is coupled to the second MTJ.