公开(公告)号：GB2603442A

公开(公告)日：2022-08-03

申请号：GB202207430

申请日：2020-10-23

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  ERIC RAYMOND EVARTS ,  VIRAT VASAV MEHTA ,  BAHMAN HEKMATSHOARTABARI

IPC: H01L27/22 ,  G11C11/16 ,  H01S5/026 ,  H01S5/183

Abstract: An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell.

公开(公告)号：GB2616375B

公开(公告)日：2025-05-14

申请号：GB202308637

申请日：2021-11-10

Applicant: IBM

Inventor： KARTHIK YOGENDRA ,  ERIC RAYMOND EVARTS

IPC: G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H10B61/00 ,  H10N50/80

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a first heavy metal layer and a first magnetic tunnel junctions (MTJ) coupled to the first heavy metal layer. The first MTJ has a first area. The MRAM cell further comprises a second MTJ. The second MTJ is connected in series with the first MTJ, and the second MTJ has a second area that is different than the first area. The second MTJ shared a reference layer with the first MTJ. The MRAM cell further comprises a second heavy metal layer that is coupled to the second MTJ.