公开(公告)号：US3765960A

公开(公告)日：1973-10-16

申请号：US3765960D

申请日：1970-11-02

Applicant: IBM

Inventor： LYONS V ,  POGGE H ,  BOSS D ,  KEMLAGE B

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L7/36 ,  C23C13/02

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  H01L21/74 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S438/916

Abstract: Autodoping is minimized during the growth of an epitaxial layer on a semiconductor substrate by contacting the substrate with a gaseous reaction mixture at a low pressure, substantially below atmospheric to deposit at least the initial capping layer. The reaction mixture contains a relatively minor portion of a semiconductor compound along with a carrier gas. Subsequently, a second gaseous reaction mixture containing a greater portion of a compound of a semiconductor material may be used to complete the deposition of the epitaxial layer. This is done merely to reduce the total growth cycle.

Abstract translation: 在半导体衬底上外延层的生长过程中，通过在基本上低于大气压的低压下将衬底与气态反应混合物接触，使自掺杂最小化，从而沉积至少初始的覆盖层。