公开(公告)号：JP2002026018A

公开(公告)日：2002-01-25

申请号：JP2001127214

申请日：2001-04-25

Applicant: IBM

Inventor： PETRARCA KEVIN S ,  DONALD CANAPERI ,  KERRISHIRNAN MAHADEVAJAY ,  KENNETH J STAIN ,  VOLANT RICHARD P

IPC: H01L21/288 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal structure encapsulated in a feature formed in a substrate. SOLUTION: A side wall and bottom surface of a feature are covered with a barrier layer, and the feature is filled with metal preferably by electrolytical plating. A recess is made in the metal, an upper surface of the metal is covered to deposit an additional barrier layer contacted with a first barrier layer. The additional barrier layer is planarized preferably by chemical mechanical polishing. This method can be used to manufacture an MIM capacitor. In this case, the encapsulated metal structure functions as a lower plate of the capacitor. A second substrate layer is deposited on an upper surface of the substrate and an opening is made in an upper surface of the encapsulated metal structure. A dielectric layer is deposited on the opening to thereby cover the encapsulated metal structure at the bottom of the opening. An additional layer acting as the upper plate of the capacitor is deposited to cover the dielectric layer and fill the opening. The dielectric layer and additional layer are planarized preferably by the CMP method.