公开(公告)号：AT99456T

公开(公告)日：1994-01-15

申请号：AT86113867

申请日：1986-10-07

Applicant: IBM

Inventor： KENNEY DONALD

IPC: H01L27/10 ,  G11C11/34 ,  H01L21/762 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

Abstract: A memory cell (10) formed in a groove or trench (18) in a semiconductor substrate (26) is provided which includes a storage capacitor (30) located at the bottom and along the lower portion of the sidewalls of the trench, a bit/sense line (32) disposed at the surface of the semiconductor substrate adjacent to the trench, a transfer device (34) or transistor located on the sidewall of the trench between the capacitor and the bit/sense line and a field (36) for electrically isolating the storage capacitor from an adjacent cell formed in the same semiconductor substrate.

公开(公告)号：AT95632T

公开(公告)日：1993-10-15

申请号：AT87108924

申请日：1987-06-23

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.