公开(公告)号：DE3787687T2

公开(公告)日：1994-05-05

申请号：DE3787687

申请日：1987-06-23

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：DK365487A

公开(公告)日：1988-01-16

申请号：DK365487

申请日：1987-07-14

Applicant: IBM

Inventor： GARNACHE RICHAD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  G11C11/34 ,  H01L27/04

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：DE3787687D1

公开(公告)日：1993-11-11

申请号：DE3787687

申请日：1987-06-23

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：NO172714C

公开(公告)日：1993-08-25

申请号：NO872721

申请日：1987-06-29

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L21/8242 ,  H01L27/108 ,  H01L27/10 ,  G11C11/34

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：DK365487D0

公开(公告)日：1987-07-14

申请号：DK365487

申请日：1987-07-14

Applicant: IBM

Inventor： GARNACHE RICHAD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  G11C11/34 ,  H01L27/04

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：ES2044872T3

公开(公告)日：1994-01-16

申请号：ES87108924

申请日：1987-06-23

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：NO172714B

公开(公告)日：1993-05-18

申请号：NO872721

申请日：1987-06-29

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L21/8242 ,  H01L27/108 ,  H01L27/10 ,  G11C11/34

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：BR9001375A

公开(公告)日：1991-04-02

申请号：BR9001375

申请日：1990-03-26

Applicant: IBM

Inventor： KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/02

Abstract: A very small memory cell utilizing only two squares at a major surface is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, a storage capacitor (16) having a storage node (20) disposed within a given sidewall of the trench (24), a switching device (12) coupled to the storage capacitor (16) and having an elongated current carrying element (22) disposed within the given sidewall with its longitudinal direction arranged parallel to that of the longitudinal axis of the trench (24) and a control element (14) disposed on the sidewall of the trench (24) between the storage capacitor (16) and the elongated current carrying element (22), and an electrically conductive line (28) disposed on the major surface of the semiconductor substrate (26) in a direction orthogonal to the longitudinal axis of the trench (24) and in contact with the control element (14) of the switching device (12). Furthermore, two complete memory cells (10A, 10B) are formed at each trench-word line intersection with one cell formed on each side of the trench (24) at each intersection.

公开(公告)号：AU594169B2

公开(公告)日：1990-03-01

申请号：AU7524887

申请日：1987-07-06

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  H01L27/04

Abstract: A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

公开(公告)号：NO872721A

公开(公告)日：1988-01-18

申请号：NO872721

申请日：1987-06-29

Applicant: IBM

Inventor： GARNACHE RICHARD RAYMOND ,  KENNEY DONALD MACALPINE

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  G11C

CPC classification number: H01L27/10841