公开(公告)号：DE3850847T2

公开(公告)日：1995-03-09

申请号：DE3850847

申请日：1988-10-11

Applicant: IBM

Inventor： GLANG REINHARD ,  KU SAN MEI

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/285 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/08 ,  H01L29/732 ,  H01L21/82 ,  H01L21/225

Abstract: A semiconductor process for fabricating bipolar devices of one type and extendible to include bipolar devices of a second type in the same epi-layer. The process protects selected surfaces of the epi-layer against deleterious processes associated with the formation of future emitter/contact regions for the devices. Subsequently, such emitter/contact regions are formed beneath such protected surfaces and contribute to enhanced device performance. The process also provides improved planarization of an insulating layer on the epi-layer by chemical-mechanical polishing. The planarization in conjunction with a mask formed in the insulating layer facilitates the formation of self-aligned emitter/base regions to appropriate thicknesses for high performance devices.

公开(公告)号：DE3850847D1

公开(公告)日：1994-09-01

申请号：DE3850847

申请日：1988-10-11

Applicant: IBM

Inventor： GLANG REINHARD ,  KU SAN MEI

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/285 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/08 ,  H01L29/732 ,  H01L21/82 ,  H01L21/225

Abstract: A semiconductor process for fabricating bipolar devices of one type and extendible to include bipolar devices of a second type in the same epi-layer. The process protects selected surfaces of the epi-layer against deleterious processes associated with the formation of future emitter/contact regions for the devices. Subsequently, such emitter/contact regions are formed beneath such protected surfaces and contribute to enhanced device performance. The process also provides improved planarization of an insulating layer on the epi-layer by chemical-mechanical polishing. The planarization in conjunction with a mask formed in the insulating layer facilitates the formation of self-aligned emitter/base regions to appropriate thicknesses for high performance devices.